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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 4 — Feb. 25, 2013
  • pp: 4908–4916

Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2

Philipp Tonndorf, Robert Schmidt, Philipp Böttger, Xiao Zhang, Janna Börner, Andreas Liebig, Manfred Albrecht, Christian Kloc, Ovidiu Gordan, Dietrich R. T. Zahn, Steffen Michaelis de Vasconcellos, and Rudolf Bratschitsch  »View Author Affiliations

Optics Express, Vol. 21, Issue 4, pp. 4908-4916 (2013)

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We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.

© 2013 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(180.1790) Microscopy : Confocal microscopy
(300.6250) Spectroscopy : Spectroscopy, condensed matter
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence
(300.6330) Spectroscopy : Spectroscopy, inelastic scattering including Raman
(300.6450) Spectroscopy : Spectroscopy, Raman
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(160.4236) Materials : Nanomaterials
(180.5655) Microscopy : Raman microscopy

ToC Category:

Original Manuscript: December 17, 2012
Revised Manuscript: January 21, 2013
Manuscript Accepted: January 21, 2013
Published: February 20, 2013

Philipp Tonndorf, Robert Schmidt, Philipp Böttger, Xiao Zhang, Janna Börner, Andreas Liebig, Manfred Albrecht, Christian Kloc, Ovidiu Gordan, Dietrich R. T. Zahn, Steffen Michaelis de Vasconcellos, and Rudolf Bratschitsch, "Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2," Opt. Express 21, 4908-4916 (2013)

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