OSA's Digital Library

Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 6 — Mar. 25, 2013
  • pp: 7125–7130

An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholes

Seung Hwan Kim, Hyun Ho Park, Young Ho Song, Hyung Jo Park, Jae Beom Kim, Seong Ran Jeon, Hyun Jeong, Mun Seok Jeong, and Gye Mo Yang  »View Author Affiliations


Optics Express, Vol. 21, Issue 6, pp. 7125-7130 (2013)
http://dx.doi.org/10.1364/OE.21.007125


View Full Text Article

Enhanced HTML    Acrobat PDF (2186 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

We have demonstrated the enhancement of a GaN-based light emitting diode (LED) by means of a selective etching technique. A conventional LED structure was periodically etched, to form periodic microholes. It showed an improvement of the light extraction efficiency (LEE) of approximately 15%, compared to that of a conventional LED. Furthermore, nano-sized rods inside the microholes were randomly formed by using a powder mask, resulting in an LEE of 43%. From the result of confocal scanning electroluminescence measurement, the light emission arises mainly from the vicinity of the nanorods in the periodic microholes. Therefore, we found that nanorods randomly distributed in periodic microholes in a LED structure play a significant role in the reduction of total internal reflection, by acting as photon wave-guides and scattering centers. This method would be valuable for the fabrication of high efficiency GaN-based LED, in terms of technical simplification and cost.

© 2013 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(180.1790) Microscopy : Confocal microscopy
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Optical Devices

History
Original Manuscript: December 20, 2012
Revised Manuscript: February 20, 2013
Manuscript Accepted: March 1, 2013
Published: March 13, 2013

Citation
Seung Hwan Kim, Hyun Ho Park, Young Ho Song, Hyung Jo Park, Jae Beom Kim, Seong Ran Jeon, Hyun Jeong, Mun Seok Jeong, and Gye Mo Yang, "An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholes," Opt. Express 21, 7125-7130 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-6-7125


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. I. Akssaki, “Key inventions in the history of nitride-based blue LED and LD,” J. Cryst. Growth 300(1), 2–10 (2007). [CrossRef]
  2. H. Jia, L. Guo, W. Wang, and H. Chen, “Recent progress in GaN-based light-emitting diodes,” Adv. Mater. 21(45), 4641–4646 (2009). [CrossRef]
  3. J. K. Kim, A. N. Noemaun, F. W. Mont, D. Meyaard, E. F. Schubert, D. J. Poxson, H. Kim, C. Sone, and Y. Park, “Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillars,” Appl. Phys. Lett. 93(22), 221111 (2008). [CrossRef]
  4. I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin?film light?emitting diodes,” Appl. Phys. Lett. 63(16), 2174–2176 (1993). [CrossRef]
  5. H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang, “Improvement of the performance of GaN based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008). [CrossRef]
  6. J. Y. Kim, M. K. Kwon, K. S. Lee, S. J. Park, S. H. Kim, and K. D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett. 91(18), 181109 (2007). [CrossRef]
  7. C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface,” Appl. Phys. Lett. 93, 9383–9385 (2003).
  8. C. C. Yang, R. H. Horng, C. E. Lee, W. Y. Lin, K. F. Pan, Y. Y. Su, and D. S. Wuu, “Improvement in extraction efficiency of GaN-based light-emitting diodes with textured surface layer by natural lithography,” Jpn. J. Appl. Phys. 44(4B), 2525–2527 (2005). [CrossRef]
  9. C. L. Lee, S. C. Lee, and W. I. Lee, “Nonlithographic random masking and regrowth of GaN micro-hillocks to improve light-emitting diode efficiency,” Jpn. J. Appl. Phys. 45(1), L4–L7 (2006). [CrossRef]
  10. T. S. Kim, S. M. Kim, Y. H. Jang, and G. Y. Jung, “Increase of light extraction from GaN based light emitting diodes incorporating patterned structure by colloidal lithography,” Appl. Phys. Lett. 91(17), 171114 (2007). [CrossRef]
  11. Y.-K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett. 91(22), 221107 (2007). [CrossRef]
  12. Q. Zhang, K. H. Li, and H. W. Choi, “InGaN light-emitting diodes with indium-tin-oxide sub-micron lenses patterned by nanosphere lithography,” Appl. Phys. Lett. 100(6), 061120 (2012). [CrossRef]
  13. S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang, “InGaN/GaN quantum well interconnected microdisk light emitting diodes,” Appl. Phys. Lett. 77(20), 3236–3238 (2000). [CrossRef]
  14. H. W. Choi, C. W. Jeon, and M. D. Dawson, “InGaN microring light-emitting diodes,” IEEE Photon. Technol. Lett. 16(1), 33–35 (2004). [CrossRef]
  15. R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, H. Tang, A. Botchkarev, W. Kim, and H. Morkoc, “Optical properties of GaN/AlGaN multiple quantum well microdisks,” Appl. Phys. Lett. 71(20), 2898–2900 (1997). [CrossRef]
  16. K. C. Zeng, L. Dai, J. Y. Lin, and H. X. Jiang, “Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities,” Appl. Phys. Lett. 75(17), 2563–2565 (1999). [CrossRef]
  17. T. H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, and S. C. Wang, “Enhancement in light output of InGaN-based microhole array light-emitting diodes,” IEEE Photon. Technol. Lett. 17(6), 1163–1165 (2005). [CrossRef]
  18. S. H. Kim, T. K. Kim, S. S. Yang, J. K. Son, K. H. Lee, Y. G. Hong, S. J. Bae, K. H. Shim, J. W. Yang, and G. M. Yang, “Al2O3 powder coating and surface texturing for high efficiency GaN-based light emitting diodes,” Jpn. J. Appl. Phys. 48(9), 092101 (2009). [CrossRef]
  19. H. Jeong, Y. H. Kim, T. H. Seo, H. S. Lee, J. S. Kim, E.-K. Suh, and M. S. Jeong, “Enhancement of light output power in GaN-based light-emitting diodes using hydrothermally grown ZnO micro-walls,” Opt. Express 20(10), 10597–10604 (2012). [CrossRef] [PubMed]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Figures

Fig. 1 Fig. 2 Fig. 3
 
Fig. 4 Fig. 5
 

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited