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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 8 — Apr. 22, 2013
  • pp: 9967–9973

High-power flip-chip mounted photodiode array

Allen S. Cross, Qiugui Zhou, Andreas Beling, Yang Fu, and Joe C. Campbell  »View Author Affiliations

Optics Express, Vol. 21, Issue 8, pp. 9967-9973 (2013)

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Four-element modified uni-traveling-carrier (MUTC) photodiode arrays (PDA) flip-chip bonded onto transmission lines on AlN substrates are demonstrated. High RF output powers of 26.2 dBm and 21.0 dBm are achieved at 35 GHz and 48 GHz, respectively, using a PDA with 28-μm diameter photodiodes. A systematic comparison between a PDA with four 20 μm-diameter elements and a discrete detector with the same active area (40-μm diameter) is presented. The PDA achieved higher output power and thermal dissipation compared to its discrete counterpart.

© 2013 OSA

OCIS Codes
(040.1240) Detectors : Arrays
(230.5170) Optical devices : Photodiodes
(250.0250) Optoelectronics : Optoelectronics
(060.5625) Fiber optics and optical communications : Radio frequency photonics
(250.0040) Optoelectronics : Detectors

ToC Category:

Original Manuscript: January 29, 2013
Revised Manuscript: March 10, 2013
Manuscript Accepted: March 11, 2013
Published: April 15, 2013

Allen S. Cross, Qiugui Zhou, Andreas Beling, Yang Fu, and Joe C. Campbell, "High-power flip-chip mounted photodiode array," Opt. Express 21, 9967-9973 (2013)

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