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Energy Express

  • Editor: Christian Seassal
  • Vol. 21, Iss. S6 — Nov. 4, 2013
  • pp: A970–A976

Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching

Semi Oh, Pei-Chen Su, Yong-Jin Yoon, Soohaeng Cho, Joon-Ho Oh, Tae-Yeon Seong, and Kyoung-Kook Kim  »View Author Affiliations


Optics Express, Vol. 21, Issue S6, pp. A970-A976 (2013)
http://dx.doi.org/10.1364/OE.21.00A970


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Abstract

We propose a dual-layer transparent Indium Tin Oxide (ITO) top electrode scheme and demonstrate the enhancement of the optical output power of GaN-based light emitting diodes (LEDs). The proposed dual-layer structure is composed of a layer with randomly distributed sphere-like nano-patterns obtained solely by a maskless wet etching process and a pre-annealed bottom layer to maintain current spreading of the electrode. It was observed that the surface morphologies and optoelectronic properties are dependent on etching duration. This electrode significantly improves the optical output power of GaN-based LEDs with an enhancement factor of 2.18 at 100 mA without degradation in electrical property when compared to a reference LED.

© 2013 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Light-Emitting Diodes

History
Original Manuscript: January 14, 2013
Revised Manuscript: March 25, 2013
Manuscript Accepted: April 18, 2013
Published: October 2, 2013

Citation
Semi Oh, Pei-Chen Su, Yong-Jin Yoon, Soohaeng Cho, Joon-Ho Oh, Tae-Yeon Seong, and Kyoung-Kook Kim, "Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching," Opt. Express 21, A970-A976 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-S6-A970


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References

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