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Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs

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Abstract

We investigate the effect of the epitaxial structure and the acceptor doping profile on the efficiency droop in InGaN/GaN LEDs by the physics based simulation of experimental internal quantum efficiency (IQE) characteristics. The device geometry is an integral part of our simulation approach. We demonstrate that even for single quantum well LEDs the droop depends critically on the acceptor doping profile. The Auger recombination was found to increase stronger than with the third power of the carrier density and has been found to dominate the droop in the roll over zone of the IQE. The fitted Auger coefficients are in the range of the values predicted by atomistic simulations.

© 2014 Optical Society of America

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Figures (10)

Fig. 1
Fig. 1 Operation scheme of the device simulation for an SQW LED.
Fig. 2
Fig. 2 Left: SQW LED design (a) with abrupt doping profile and p-doped spacer layer between EBL and barrier. Right: SQW LED design (c) with graded doping in the EBL. The acceptor doping density NA and the ionized acceptor density NA,ion are shown for 10 Acm−2 (solid) and 1000 Acm−2 (dashed). The ionized acceptor density decreases with increasing hole injection.
Fig. 3
Fig. 3 Measured IQE data (crosses) from [23] versus IQE simulation for the SQW design with EBL (a) (solid), without EBL (b) (dash dot), and with graded doping in the EBL (c) (dashed).
Fig. 4
Fig. 4 Equivalent current contributions to SRH, radiative, and Auger recombination as well as direct carrier leakage versus the total current. Curves (a) hold for the abrupt doping profile design. Curves (c) are for the graded doping profile. The inset depicts the Auger recombination versus the third power of nq,avg = (nq + pq)/2 in the QW.
Fig. 5
Fig. 5 Band structure and quasi Fermi levels of the design (a) with abrupt doping profile and the design (c) with graded doping at 10 Acm−2 and 1000 Acm−2. The barrier height difference between (a) and (c) reduces with rising current.
Fig. 6
Fig. 6 Effective scattering time for electrons (triangles) and holes (squares) and relative effective radiative (stars) and Auger coefficient (diamonds) for the design with abrupt doping profile and EBL.
Fig. 7
Fig. 7 Measured IQE data (crosses) from [24] versus IQE simulation for different graded doping in the EBL. The maximum doping density is NA = 2 × 1019 cm−3 for (a) (solid) and NA = 1.5 × 1019 cm−3 for (b) (dashed)
Fig. 8
Fig. 8 Equivalent current contributions to SRH, radiative, and Auger recombination as well as direct carrier leakage versus the total current for the MQW LED and for the doping profiles (a) and (b).
Fig. 9
Fig. 9 Luminescence contribution of each QW for the MQW LED with doping profile (a). The quantum well (1) is next to the n-region. The quantum well (5) is next to the EBL.
Fig. 10
Fig. 10 Band structure and quasi Fermi levels of the MQW LED (a) at 10 Acm−2 (solid) and 1000 Acm−2 (dashed).

Tables (2)

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Table 1 Model parameters of the SQW LED simulations.

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Table 2 Model parameters of the MQW LED simulations.

Equations (5)

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B eff = d QW R rad q n q p q n i , q 2 .
R sc , e = n τ sc ( 1 exp ( E F , q E F k B T ) ) ( 1 n q N q ) σ sc ( x q ) .
τ eff = n σ sc d x q R sc d x q .
R Aug , e q = C n n q ( n q p q n i , q 2 ) ψ e 2 ψ h d x q R Aug , h q = C p n q ( n q p q n i , q 2 ) ψ h 2 ψ e d x q
C eff = d QW 2 R Aug , e q n q ( n q p q n i , q 2 ) + d QW 2 R Aug , h q p q ( n q p q n i , q 2 ) .
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