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Enhanced light output power of thin film GaN-based high voltage light-emitting diodes

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Abstract

The characteristics of high-voltage light-emitting diodes (HVLEDs) consisting of a 64-cell LED array were investigated by employing various LED structures. Two types of HVLED were examined: a standard HVLED with a single roughened indium tin oxide (ITO) surface grown on a sapphire substrate and a thin-film HVLED (TF-HVLED) with a roughened n-GaN and ITO double side transferred to a mirror/silicon substrate. At an injection current of 24 mA, the output powers of the HVLEDs fabricated using a sapphire substrate and those fabricated using a mirror/silicon substrate were 170 and 216 mW, respectively. Because the TF-HVLED exhibited improved thermal dissipation and light extraction, it produced a greater output power than the HVLED fabricated using the sapphire substrate did.

© 2014 Optical Society of America

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Figures (7)

Fig. 1
Fig. 1 Fabrication flow of a single cell LED.
Fig. 2
Fig. 2 Schematic structure of the (a) TF-HVLEDs, (b) C-HVLEDs, and (c) encapsulated HVLEDs.
Fig. 3
Fig. 3 Optical microscope images of the (a) C-HVLEDs and (b) TF-HVLEDs.
Fig. 4
Fig. 4 I–V curves of the C-HVLED and TF-HVLED. The inset shows I–V curves of the single cell LED on a sapphire and a mirror/silicon substrate.
Fig. 5
Fig. 5 Plots of light output power and WPE against the injection current for the C-HVLED and TF-HVLED.
Fig. 6
Fig. 6 (a) EL emission peak wavelength as a function of the injection current for the C-HVLED and TF-HVLED. (b) EL spectra of both HVLEDs measured at 80 mA.
Fig. 7
Fig. 7 Surface temperature distributions of the C-HVLED and TF-HVLED at injection currents of (a and c) 24 mA and (b and d) 80 mA.

Equations (2)

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η W P E = P L V f I f = η E Q E E p h V f = η I Q E η L E E E p h V f × 100 %
( η W P E ) T F H V L E D ( η W P E ) C H V L E D = [ η I Q E η L E E E p h V f ] T F H V L E D [ η I Q E η L E E E p h V f ] C H V L E D
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