Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors

Open Access Open Access

Abstract

In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

© 2014 Optical Society of America

Full Article  |  PDF Article
More Like This
Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: reply

Ya-Ju Lee, Zu-Po Yang, Pin-Guang Chen, Yung-An Hsieh, Yung-Chi Yao, Ming-Han Liao, Min-Hung Lee, Mei-Tan Wang, and Jung-Min Hwang
Opt. Express 26(2) A110-A110 (2018)

Monolithic integrated all-GaN-based µLED display by selective area regrowth

Yaying Liu, Zhaojun Liu, and Kei May Lau
Opt. Express 31(19) 31300-31307 (2023)

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1 Schematic plot of monolithically integrated GaN-based light-emitting diode (LED) and metal-oxide-semiconductor filed-effect transistor (MOSFET) device. The equivalent electronic circuit of monolithically integrated LED/MOSFET device is also inserted in the figure.
Fig. 2
Fig. 2 (a) Top-view SEM image of the monolithically integrated and serially connected LED/MOSFET device. (b) AFM images of the LED (top, p-GaN region) and MOSFET (bottom, Gate region) surfaces with a scanned area of 20 × 20 μm2.
Fig. 3
Fig. 3 (a) Output ID-VD and (b) transfer characteristics measured on the monolithically integrated LED/MOSFET device.
Fig. 4
Fig. 4 (a) Current vs. voltage (I-V) behavior of the LED in both linear (red line) and semi-log (black line) scales. Inset: An optical image of the monolithically integrated LED/MOSFET device lighted up under an injection current of 20 mA. (b) Light output power (LOP) and external quantum efficiency (EQE) vs. forward injected current of the LED. Inset: EL spectrum of the LED at an injection current of 20mA with an emitting wavelength of λ = 485nm.
Fig. 5
Fig. 5 (a) LED’s current (same as the source-to-drain current, IDS) and light output power (LOP) versus supply voltage (VDD) with different gate voltages. Inset: oscilloscope signals of VGS, VDS, and LOP (grabbed by the photo-detector), from top to the bottom, respectively. (b) IDS and LOP versus VGS for both VDD = 7V and VDD = 15V.
Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved