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Efficiency dip observed with InGaN-based multiple quantum well solar cells

K. Y. Lai, G. J. Lin, Yuh-Renn Wu, Meng-Lun Tsai, and Jr-Hau He

Open Access Open Access

Abstract

The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

© 2014 Optical Society of America

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Figures (5)
Fig. 1
Fig. 1 (a) PL spectra of the MQWs with 15% and 25% indium at the incident power density of 5 W/m2. (b) PL peak wavelengths as a function of driving current for the MQWs with 15% and 25% indium.

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Fig. 2
Fig. 2 Normalized PL spectra at the power densities from 5 W/m2 to 25 W/m2 for the MQW solar cells with the indium compositions of (a) 15%; (b) 25%.

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Fig. 3
Fig. 3 (a) EQE spectra of the two MQW solar cells with the incident power density at λ = 380 nm fixed at 5 W/m2. (b) J-V curves under AM 1.5G for the solar cells with 15% and 25% indium compositions.

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Fig. 4
Fig. 4 The measured EQEs at λ = 380 nm as a function of incident power density for the two MQW solar cells.

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Fig. 5
Fig. 5 Simulated EQE curves at λ = 380 nm as a function of incident power density for the MQW solar cells with 15% and 25% indium.

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Tables (1)

Tables Icon

Table 1 The device characteristics determined from Fig. 3(b).

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Equations (2)

Equations on this page are rendered with MathJax. Learn more.

d n d t = G − A n − B n 2 − C n 3 − E
dn dt ≈G−B n 2 −E
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