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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 3 — Feb. 10, 2014
  • pp: 2348–2357

Experimental bifurcation-cascade diagram of an external-cavity semiconductor laser

Byungchil Kim, Nianqiang Li, A. Locquet, and D. S. Citrin  »View Author Affiliations

Optics Express, Vol. 22, Issue 3, pp. 2348-2357 (2014)

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This Letter is the first to report experimental bifurcation diagrams of an external-cavity semiconductor laser (ECSL) in the low-to-moderate current injection regime and long-cavity case. Based on the bifurcation cascade behavior which was unveiled by Hohl and Gavrielides [Phys. Rev. Lett. 82, 1148–1151 (1999)], we present a detailed experimental investigation of the nonlinear dynamics of ECSLs and of the robustness of the cascade to changes in the current and cavity length. Also, we report for the first time a well resolved experimental Hopf bifurcation in an ECSL. Based on the Lang and Kobayashi model, we identify the dynamical regimes and the instabilities involved in the cascade, as well as the influence of the current and cavity length on the cascade.

© 2014 Optical Society of America

OCIS Codes
(140.1540) Lasers and laser optics : Chaos
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(190.3100) Nonlinear optics : Instabilities and chaos

ToC Category:
Lasers and Laser Optics

Original Manuscript: November 7, 2013
Revised Manuscript: January 20, 2014
Manuscript Accepted: January 20, 2014
Published: January 28, 2014

Byungchil Kim, Nianqiang Li, A. Locquet, and D. S. Citrin, "Experimental bifurcation-cascade diagram of an external-cavity semiconductor laser," Opt. Express 22, 2348-2357 (2014)

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