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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 7 — Apr. 7, 2014
  • pp: 7458–7464

Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator

Younghyun Kim, Jaehoon Han, Mitsuru Takenaka, and Shinichi Takagi  »View Author Affiliations


Optics Express, Vol. 22, Issue 7, pp. 7458-7464 (2014)
http://dx.doi.org/10.1364/OE.22.007458


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Abstract

Surface passivation by Al2O3 deposited by atomic layer deposition (ALD) at 200 °C is examined to suppress surface recombination for carrier-injection SiGe optical modulators. We have investigated the interface trap densities at SiO2/Si and Al2O3/Si interfaces formed by plasma enhanced chemical vapor deposition (PECVD) and ALD, respectively. By evaluating metal-oxide-semiconductor (MOS) capacitors formed on Si surfaces after dry etching, we found that the interface trap density of Al2O3 passivated surface is more than one order of magnitude less than that of SiO2 passivated one. As a result, the modulation efficiency is improved by 1.3 by inserting Al2O3 layer prior to SiO2 deposition by PECVD owing to superior interface between Al2O3 and Si. The Al2O3 passivated device exhibits comparable modulation efficiency to a thermally-grown SiO2 passivated one formed by dry oxidation. Hence, the ALD Al2O3 passivation is effective to passivate SiGe optical modulators for which low temperature processes are required.

© 2014 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Optoelectronics

History
Original Manuscript: January 21, 2014
Revised Manuscript: March 12, 2014
Manuscript Accepted: March 18, 2014
Published: March 24, 2014

Citation
Younghyun Kim, Jaehoon Han, Mitsuru Takenaka, and Shinichi Takagi, "Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator," Opt. Express 22, 7458-7464 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-7-7458


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