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Optics Express

Optics Express

  • Editor: J. H. Eberly
  • Vol. 4, Iss. 1 — Jan. 4, 1999
  • pp: 3–11

High performance laser diode bars with aluminum-free active regions

M. Jansen, P. Bournes, P. Corvini, F. Fang, M. Finander, M. Hmelar, T. Johnston, C. Jordan, R. Nabiev, J. Nightingale, M. Widman, H. Asonen, J. Aarik, A. Salokatve, J. Nappi, and K. Rakennus  »View Author Affiliations


Optics Express, Vol. 4, Issue 1, pp. 3-11 (1999)
http://dx.doi.org/10.1364/OE.4.000003


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Abstract

We present operating and lifetest data on 795 and 808 nm bars with aluminum-free active regions. Conductively cooled bars operate reliably at CW power outputs of 40 W, and have high efficiency, low beam divergence, and narrow spectra. Record CW powers of 115 W CW are demonstrated at 795 nm for 30% fill-factor bars mounted on microchannel coolers. We also review QCW performance and lifetime for higher fill-factor bars processed on identical epitaxial material.

© Optical Society of America

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Focus Issue: Diode-pumped lasers

History
Original Manuscript: December 3, 1998
Published: January 4, 1999

Citation
Mitch Jansen, P. Bournes, Pat Corvini, Fang Fang, M. Finander, Michael Hmelar, T. Johnston, C. Jordan, R. Nabiev, John Nightingale, Michael Widman, Harry Asonen, J. Aarik, Arto Salokatve, Jari Nappi, and K. Rakennus, "High performance laser diode bars with aluminum-free active regions," Opt. Express 4, 3-11 (1999)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-4-1-3


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References

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  6. M. Jansen, H. Asonen, P. Bournes, P. Corvini, F. Fang, M. Finander, R. Nabiev, J. Nappi, K. Rakennus and A. Salokatve, "40W CW Operation of 808nm Bars," CLEO Postdeadline Paper CPD15-2, (1998).
  7. R. F. Nabiev, J. Aarik, H. Asonen, P. Bournes, P. Corvini, F. Fang, M. Finander, M. Jansen, J. Nappi, K. Rakennus and A. Salokatve, "Tensile-Strained Single Quantum Well 808 nm Lasers with Al-Free Active Regions and InGaAlP Cladding Layers Grown by Solid Source MBE," International Semiconductor Laser Conference, Japan, paper TuA1 (1998).
  8. P. Bournes, H. Asonen, F. Fang, M. Finander, M. Hmelar, M Jansen, R. F. Nabiev, J. Nappi, K. Rakkenus and A. Salokatve, "795 nm-Emitting 40 W CW High-Temperature Laser Diode Bars with Al -Free Active Area," LEOS annual meeting, Orlando, USA, paper WQ2, (1998).

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