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Optics Express

Optics Express

  • Editor: J. H. Eberly
  • Vol. 6, Iss. 1 — Jan. 3, 2000
  • pp: 7–11

Possibility of fabricating light-emitting porous silicon from gas phase etchants

S. Kalem and O. Yavuzcetin  »View Author Affiliations


Optics Express, Vol. 6, Issue 1, pp. 7-11 (2000)
http://dx.doi.org/10.1364/OE.6.000007


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Abstract

We present a new technique for porous semiconductor formation which is based on the exposure of semiconductor surfaces to gas phase etchants. The technique offers the possibility of fabricating light-emitting devices by selectively exposing a silicon surface to HF vapor. Photoluminescence measurements reveal an efficient emission at around 750 nm. FTIR analysis confirm the existence of strong hydrogen incorporation and oxidation as evidenced from the local bonding environment of hydrogen and oxygen atoms.

© Optical Society of America

OCIS Codes
(040.6040) Detectors : Silicon
(160.2100) Materials : Electro-optical materials
(160.2540) Materials : Fluorescent and luminescent materials
(240.0310) Optics at surfaces : Thin films
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Research Papers

History
Original Manuscript: November 9, 1999
Published: January 3, 2000

Citation
Seref Kalem and O. Yavuzcetin, "Possibility of fabricating light-emitting porous silicon from gas phase etchants," Opt. Express 6, 7-11 (2000)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-6-1-7


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References

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