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Optics Express

Optics Express

  • Editor: J. H. Eberly
  • Vol. 9, Iss. 13 — Dec. 17, 2001
  • pp: 796–801

Optical emission from bound states of semiconductor deep-centers

Janet L. Pan  »View Author Affiliations


Optics Express, Vol. 9, Issue 13, pp. 796-801 (2001)
http://dx.doi.org/10.1364/OE.9.000796


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Abstract

We find the first, simple, analytical expressions for the bound states of a short-ranged, spherically-symmetric deep center potential in terms of the eigenstates of total (spin plus Bloch plus envelope) angular momentum and the Kane 8×8 k · p Hamiltonian. We find that the spatial extent of the deep center bound state is proportional to the Kane dipole. This physical size of the deep center bound state is in excellent agreement with both scanning-tunneling-microscopy and measured optical dipoles.

© Optical Society of America

OCIS Codes
(160.4760) Materials : Optical properties
(160.4890) Materials : Organic materials
(160.5140) Materials : Photoconductive materials
(160.5320) Materials : Photorefractive materials
(160.6000) Materials : Semiconductor materials
(300.2140) Spectroscopy : Emission
(300.6470) Spectroscopy : Spectroscopy, semiconductors

ToC Category:
Research Papers

History
Original Manuscript: November 14, 2001
Published: December 17, 2001

Citation
Janet Pan, "Optical emission from bound states of semiconductor deep-centers," Opt. Express 9, 796-801 (2001)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-9-13-796


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References

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