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Single-frequency Ince-Gaussian mode operations of laser-diode-pumped microchip solid-state lasers

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Abstract

Abstract

Various single-frequency Ince-Gaussian mode oscillations have been achieved in laser-diode-pumped microchip solid-state lasers, including LiNdP4O12 (LNP) and Nd:GdVO4, by adjusting the azimuthal symmetry of the short laser resonator. Ince-Gaussian modes formed by astigmatic pumping have been reproduced by numerical simulation.

©2007 Optical Society of America

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Figures (13)

Fig. 1.
Fig. 1. (a). Experimental setup for selective excitations of IG modes. (b) Examples of IG modes in a LiNdP4O12 laser. Pump power P=293 mW. (c) Analytical solutions corresponding to (b).
Fig. 2.
Fig. 2. Pump-dependent structural changes of lasing patterns for different azimuthal symmetries of the cavity.
Fig. 3.
Fig. 3. Modal input-output characteristics, optical spectra, and far-field pattern changes as a function of pump power in a well-aligned LNP laser with θ=0.
Fig. 4.
Fig. 4. (a). Higher-order IG mode patterns and their optical spectra in the LNP laser for different tilts at almost constant pump power. (b) Pump-dependent lasing patterns and their optical spectra for a fixed tilt.
Fig. 5.
Fig. 5. Far-field patterns and scanning Fabry-Perot interferometer traces indicating single-frequency IG mode operations in the LNP laser.
Fig. 6.
Fig. 6. Example IG modes observed in a Nd:GdVO4 laser for (a) different tilts and (b) different crystal positions in the pump direction (z-axis). The pump spot size decreased with Δz. (c) Analytic solutions corresponding to (a) and (b).
Fig. 7.
Fig. 7. IGe 3,1 patterns observed at different propagation planes
Fig. 8.
Fig. 8. Example of higher-order IG mode observed in the high pump-power regime and its structural change versus changes in the pump position and pump power. Corresponding analytical solutions are shown on the right.
Fig. 9.
Fig. 9. Cavity configuration for azimuthal pumping and gain region used for simulations.
Fig. 10.
Fig. 10. Simulated formation of IG mode lasing pattern starting from a random pattern.
Fig. 11.
Fig. 11. (a). Numerical pattern changes leading to a stationary IG33 mode for an increased shift of the gain region from the lasing axis. (b) IG22 mode formation for an increased pump power.
Fig. 12.
Fig. 12. Structural change featuring a pattern rotation against a slight change in the crystal position in the pump direction (z-axis).
Fig. 13.
Fig. 13. (a). Mixed mode operations with increasing pump power. (b) Analytical result, superposition of two IGe 2,0 modes (ε=2).

Equations (7)

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IG e p , m ( r , ε ) = C w 0 w ( z ) C m p ( i ξ , ε ) C m p ( η , ε ) exp [ r 2 w ( z ) 2 ]
× exp i [ kz + { kr 2 2 R ( z ) } ( p + 1 ) ψ z ( z ) ]
g i ( x , y ) = g i 0 ( x , y ) ( 1 + I ˜ i + ( x , y ) + I ˜ i ( x , y ) I s ( x , y ) ) ,
I ˜ i + ( x , y ) = ( 1 α ) i = 0 q α i I i + ( q i ) ,
I ˜ i ( x , y ) = ( 1 α ) i = 0 q α i I i ( q i ) .
E i out ( x , y ) = E i in ( x , y ) exp [ 1 2 g i ( x , y ) d ] ,
E q + 1 ( x , y ) E q ( x , y ) .
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