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Optics Express

Optics Express

  • Editor: J. H. Eberly
  • Vol. 1, Iss. 4 — Aug. 18, 1997
  • pp: 97–101

Long-wavelength infrared (~10-15 μm) electroluminescence from Sb-based interband cascade devices

D. Zhang, E. Dupont, R. Q. Yang, H. C. Liu, C.-H. Lin, M. Buchanan, and S. S. Pei  »View Author Affiliations


Optics Express, Vol. 1, Issue 4, pp. 97-101 (1997)
http://dx.doi.org/10.1364/OE.1.000097


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Abstract

Electroluminescence in the long-wavelength infrared (10-15 μm) spectrum region was observed from Sb-based type-II interband cascade quantum well structures. The device structure was grown by molecular beam epitaxy on a GaSb substrate and comprises 10 repeated periods of active regions separated by digitally graded multilayer injection regions. The devices have been operated at 300 K and 77 K, with an output optical power up to 50 nW. The emission wavelength, the longest observed in any compound semiconductor material at room temperature, results from tailoring the heterostructure, demonstrating a unique capability of this Sb-family type-II material system.

© Optical Society of America

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Focus Issue: Mid-IR laser materials

History
Original Manuscript: July 30, 1997
Published: August 18, 1997

Citation
Dongxu Zhang, Rui Yang, C. -H. Lin, Shin-Shem Pei, Emmanuel Dupont, H. Liu, and M. Buchanan, "Long-wavelength infrared (~10-15 mm) electroluminescence from Sb-based interband cascade devices," Opt. Express 1, 97-101 (1997)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-1-4-97


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