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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 10, Iss. 13 — Jul. 1, 2002
  • pp: 530–535

Fabrication and characterization of dry and wet etched InGaAs/InGaAsP/InP long wavelength semiconductor lasers

Bulent Cakmak  »View Author Affiliations

Optics Express, Vol. 10, Issue 13, pp. 530-535 (2002)

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This paper presents fabrication and characterization of ridge waveguide InGaAs/InGaAsP/InP lasers with an operating wavelength of 1.5µm using reactive ion etching (RIE), chemically assisted ion beam etching (CAIBE) and wet etching techniques. Characterization results of the lasers with 2μm-wide waveguides are given of the two etching methods comparatively using Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), L-I-V (Light-current-voltage) and spectral measurement techniques. Additionally, a comparison of wet and RIE etched lasers with 20μm-wide waveguide is also discussed. Highly smooth (2.1±0.4nm rms surface roughness) and vertical (~90°) structures are obtained using RIE, in which the 2μm-wide fabricated devices exhibit better performance over the CAIBE etched ones.

© 2002 Optical Society of America

OCIS Codes
(120.6660) Instrumentation, measurement, and metrology : Surface measurements, roughness
(140.5960) Lasers and laser optics : Semiconductor lasers
(180.5810) Microscopy : Scanning microscopy
(220.4000) Optical design and fabrication : Microstructure fabrication
(300.6210) Spectroscopy : Spectroscopy, atomic

ToC Category:
Research Papers

Original Manuscript: February 14, 2002
Revised Manuscript: June 17, 2002
Published: July 1, 2002

Bulent Cakmak, "Fabrication and characterization of dry and wet etched InGaAs/InGaAsP/InP long wavelength semiconductor lasers," Opt. Express 10, 530-535 (2002)

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  1. D. E. Ibbotson and D. L. Flamm, �??Plasma etching for III-V compound devices.2,�?? Solid State Tech. 31, 105 (1988).
  2. J. W. Lee, J. Hong, C. R. Abernathy, E. S. Lambers, S. J. Pearton, W. S. Hobson and F. Ren, �??Cl2/Ar plasma etching of binary, ternary, and quaternary In- based compound semiconductors,�?? J. Vac. Sci. Tech. B 14, 2567-2573C (1996). [CrossRef]
  3. S. Allen and P. Silverberg, �??Methane-hydrogen III-V metal-organic reactive ion etching,�?? Semiconductor Sci. Tech. 6, 287-289 (1991). [CrossRef]
  4. C. S.Whelan, T. E. Kazior andK. Y. Hur, �??High rate CH4:H2 plasma etch processes for InP,�?? J. Vac. Sci. Tech. B 15, 1728-1732 (1997). [CrossRef]
  5. Y. Yuba, K. Gamo, H. Toba, X. G. He and S. Namba, �??Ion beametching of InP. I. Ar ion beametching and fabrication of grating for integrated circuits,�?? Jap. J. of Appl. Phys. 22, 1206-1210 (1983). [CrossRef]
  6. R. A. Mikhnev, S. K. Shtandel, M. I. Martynov and E. D. Olshanskii, �??How ion-beam etching affects the surface quality of optical articles,�?? J. of Optical Technology 66, 1032-1034 (1999). [CrossRef]
  7. W. Katzschner, U. Niggebrugge, R. Lofflerr and H. Schroter-Janssen, �??Reactive ion beam etching of InP with N2 and N2/O2 mixtures,�?? Appl. Phys. Lett. 48, 230-232 (1986). [CrossRef]
  8. F. Frost, A. Schindler and F. Bigl, �??Reactive ion beam etching of InSb and InAs with ultrasmooth surfaces,�?? Semiconductor Science and Tech. 13, 523-527 (1998). [CrossRef]
  9. J. Daleiden, K. Czotscher, C. Hoffmann, R. Kiefer, S. Klussmann, S.Muller, A. Nutsch, W. Pletschen, S. Weisser, G. Trankle, J. Braunstein and G. Weimann, �??Sidewall slope control of chemically assisted ionbeam etched structures in InP-based materials,�?? J. Vac. Sci. Tech. B 16, 1864-1866 (1998) [CrossRef]
  10. G. Vollrath, A. Schlachetzki and F. Fiedler, �??Ion-beam milling of InGaAsP alloys with N2/O2-mixtures,�?? Jap. J. of Appl. Phys. Part 1-Regular Papers Short Notes & Review Papers 37, 1715-1720 (1998)
  11. J. E. Schramm, D. I. Babic, E. L. Hu, J. E. Bowers and J. L. Merz, �??Fabrication of high-aspect-ratio InPbased vertical-cavity laser mirrors using CH4/H2/O2/Ar reactive ion etching,�?? J. Vac. Sci. Tech. B 15, 2031-2036 (1997). [CrossRef]
  12. N. Nunoya, M. Makamura, M. Morshed, S. Tamura and S. Arai, �??High-performance 1.55m wavelength GaInAsP-InP distributed-feedback lasers with wirelike active regions,�?? IEEE J. Sel. Top. Quantum Electron. 7, 249-258 (2001). [CrossRef]
  13. C. S. Sundararaman, H. Lafontaine, S. Poulin, A. Mouton and J. F. Currie, �??Reactive sputtering of InP in N2 and N2 /O2 plasmas,�?? J. Vac. Sci. Tech. B 9, 1433-1439 (1991). [CrossRef]
  14. C. F. Calstrom, G. Landgren and S. Anand, �??Low energy ion beam etching of InP using methane chemistry,�?? J. Vac. Sci. Tech. B 16, 1018-1023 (1998). [CrossRef]
  15. B. Cakmak and I. H. White, �??Ion beam and chemically assisted ion beam etching of InP with anisotropic and smooth structures,�?? Semicond. Sci. Technol. 16, 139-146 (2001). [CrossRef]
  16. S. Yu, P. Heard, B. Cakmak, R. V. Penty and I.H. White, �??Surface diagnostics of dry etched III-V semiconductor samples using focused ion beam and secondary ion mass spectrometry (FIB-SIMS),�?? J. Vac. Sci. Tech. B 17, 3080-3084 (1999). [CrossRef]
  17. W. Katzschner, A. Steckenborn, R. Loffler and N. Grote, �??Ion beam milling of InP with an Ar/O2 �??gas mixture,�?? Appl. Phys. Lett. 44, 352-354 (1984). [CrossRef]
  18. J. Gowar, Optical communication systems (Prentice Hall International Ltd., Hertfordshire U.K, 1993), Chap. 19.

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