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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 10, Iss. 13 — Jul. 1, 2002
  • pp: 530–535

Fabrication and characterization of dry and wet etched InGaAs/InGaAsP/InP long wavelength semiconductor lasers

Bulent Cakmak  »View Author Affiliations


Optics Express, Vol. 10, Issue 13, pp. 530-535 (2002)
http://dx.doi.org/10.1364/OE.10.000530


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Abstract

This paper presents fabrication and characterization of ridge waveguide InGaAs/InGaAsP/InP lasers with an operating wavelength of 1.5µm using reactive ion etching (RIE), chemically assisted ion beam etching (CAIBE) and wet etching techniques. Characterization results of the lasers with 2μm-wide waveguides are given of the two etching methods comparatively using Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), L-I-V (Light-current-voltage) and spectral measurement techniques. Additionally, a comparison of wet and RIE etched lasers with 20μm-wide waveguide is also discussed. Highly smooth (2.1±0.4nm rms surface roughness) and vertical (~90°) structures are obtained using RIE, in which the 2μm-wide fabricated devices exhibit better performance over the CAIBE etched ones.

© 2002 Optical Society of America

OCIS Codes
(120.6660) Instrumentation, measurement, and metrology : Surface measurements, roughness
(140.5960) Lasers and laser optics : Semiconductor lasers
(180.5810) Microscopy : Scanning microscopy
(220.4000) Optical design and fabrication : Microstructure fabrication
(300.6210) Spectroscopy : Spectroscopy, atomic

ToC Category:
Research Papers

History
Original Manuscript: February 14, 2002
Revised Manuscript: June 17, 2002
Published: July 1, 2002

Citation
Bulent Cakmak, "Fabrication and characterization of dry and wet etched InGaAs/InGaAsP/InP long wavelength semiconductor lasers," Opt. Express 10, 530-535 (2002)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-10-13-530


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References

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