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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 10, Iss. 19 — Sep. 23, 2002
  • pp: 1003–1008

Buried selectively-oxidized AlGaAs structures grown on nonplanar substrates

P. C. Ku, J. A. Hernandez, and C. J. Chang-Hasnain  »View Author Affiliations

Optics Express, Vol. 10, Issue 19, pp. 1003-1008 (2002)

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We demonstrate a novel buried oxide grating structure formed by selectively-oxidized AlxGa1-xAs grown on nonplanar substrates using low-pressure MOCVD for the first time. Localized aluminum content variation in AlGaAs is obtained with MOCVD growth on nonplanar substrate. Buried aluminum oxide/semiconductor distributed feedback structure is achieved with selective oxidation of these AlGaAs layers. We fabricated a resonant-cavity-enhanced photodetector with the imbedded buried-oxide structure and measured the photodetector responsivity spectrum.

© 2002 Optical Society of America

OCIS Codes
(050.1950) Diffraction and gratings : Diffraction gratings
(160.6000) Materials : Semiconductor materials

ToC Category:
Research Papers

Original Manuscript: July 29, 2002
Revised Manuscript: September 11, 2002
Published: September 23, 2002

Pei-Cheng Ku, J. Hernandez, and C. Chang-Hasnain, "Buried selectively-oxidized AlGaAs structures grown on nonplanar substrates," Opt. Express 10, 1003-1008 (2002)

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