Observation of bistability in a Vertical-Cavity Semiconductor Optical Amplifier (VCSOA)
Optics Express, Vol. 10, Issue 22, pp. 1273-1278 (2002)
http://dx.doi.org/10.1364/OE.10.001273
Enhanced HTML 
Acrobat PDF (230 KB)
Abstract
We report, the first time to our knowledge, an observation of optical bistability in a Vertical-Cavity Semiconductor Optical Amplifier (VCSOA) operated in reflection mode. Counterclockwise hysteresis loops are obtained over a range of initial phase detuning and bias currents. One hysteresis loop is observed experimentally with an input power as low as 2 μW when the device is biased at 98% of its lasing threshold. We also numerically simulate the optical bistability and obtain good agreement with our experimental observations. Bistable VCSOAs significantly advances the prospect of dense 2-D array of low switching-intensity all-optical logic and memory elements.
© 2002 Optical Society of America
[Optical Society of America ]
OCIS Codes
(190.1450) Nonlinear optics : Bistability
(250.5980) Optoelectronics : Semiconductor optical amplifiers
ToC Category:
Research Papers
History
Original Manuscript: September 24, 2002
Revised Manuscript: October 22, 2002
Published: November 4, 2002
Citation
Pengyue Wen, Michael Sanchez, Matthias Gross, and Sadik Esener, "Observation of bistability in a Vertical-Cavity Semiconductor Optical Amplifier (VCSOA)," Opt. Express 10, 1273-1278 (2002)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-10-22-1273
Sort: Journal | Reset
References
- M. J. Adams, �??Physics and applications of optical bistability in semiconductor laser amplifiers,�?? Solidstate Electron. 30, 1, 43-51(1987) [CrossRef]
- N. F. Mitchell, J. Ogorman, J. Hegarty and J. C. Connolly, �??Optical bistability in asymmetric Fabry-Perot laser diode amplifiers,�?? Opt. Lett. 19, 269-271 (1994) [CrossRef] [PubMed]
- T. Nakai, N. Ogasawara and R. Ito, �??Optical bistability in a semiconductor laser amplifier,�?? Jap. J. of Appl. Phys. 22, L310-L312 (1983) [CrossRef]
- Ogasawara and R. Ito, �??Static and dynamic properties of nonlinear semiconductor laser amplifiers,�?? Jap. J. Appl. Phys. 25, L739-L742 (1986) [CrossRef]
- H. J. Westlake, M. Adams and M. Omahony, �??Measurement of optical bistability in an InGaAsP laser amplifier at 1.5um,�?? Electron. Lett. 21, 992-993 (1985) [CrossRef]
- W.F. Sharfin and M. Dagenais �??High contrast, 1.3 um optical AND gate with gain,�?? Appl. Phys. Lett. 48, 1510-1512 (1986) [CrossRef]
- P. Pakdeevanich and M. Adams, �??Measurement and modeling of reflective bistability in 1.55um laser diode amplifiers,�?? IEEE J. Quantum Electron. 34, 1894-1903 (1999) [CrossRef]
- R. Lewen, K. Streubel, A. Karlsson and S. Rapp, �??Experimental demonstration of a multifunction longwavelength vertical-cavity laser amplifier-detector,�?? IEEE Photon. Technol. Lett. 10, 1067-1069 (1998) [CrossRef]
- E. S. Björlin, B. Riou, P. Abraham, J. Piprek, Y. Chiu, K. A. Black, A. Keating and J. E. Bowers, �??Long wavelength vertical-cavity semiconductor optical amplifiers,�?? IEEE J. Quantum Electron. 37, 274 (2001) [CrossRef]
- P. Wen, M. Sánchez, M. Gross, O. Kibar, S. Esener, �??New Photon Density Rate Equation for Fabry-Perot Semiconductor Optical Amplifier,�?? Photonics West 2002, Physics and Simulation of Optoelectronic Devices X, San Jose, CA, USA. 23-24, Jan. 2002, 243-250 (2002)
- H. Kawaguchi, Bistabilities and nonlinearities in laser diode (Artech House, 1994)
- M. J. Adams, H. Westlake, J. Omahony and I. Henning, �??A comparison for active and passive optical bistability in semiconductors,�?? IEEE J. Quantum Electron. 21, 1498-1504, (1985) [CrossRef]
- Z. Pan, M. Dagenais, �??Subnanosecond Optically Addressable Generalized Optical Crossbar Switch with an Aggregate Throughput Rate of 4.2 Gbit/s,�?? Appl. Phys. Lett. 62, 2185-2187 (1993) [CrossRef]
- J. Piprek, E. S. Bjorlin, J. E. Bowers, �??Optical gain-bandwidth product of vertical cavity laser amplifiers,�?? IEEE Electron. Lett. 37, 298-299 (2001) [CrossRef]
- T. E. Sale, Vertical Cavity Surface Emitting Lasers (Research Studies Press, Somerset, England, 1995).
- Z. Pan, H. Lin, M. Dagenais, �??Switching Power Dependence on Detuning and Current in Bistable Diode Laser Amplifiers,�?? Appl. Phys. Lett. 58, 687-689 (1991) [CrossRef]
Cited By |
 Alert me when this paper is cited |
OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.
Related Journal Articles 
- All-optical hysteresis control by means of cross-phase modulation in semiconductor optical amplifiers (JOSAB)
- Coupled Mach-Zehnder interferometer memory element (OL)
- Optical bistability in vertical-cavity semiconductor optical amplifiers (AO)
- Two-wavelength switching with 1550 nm semiconductor laser amplifiers (JON)
- Effects of parallel and orthogonal polarization on nonlinear optical characteristics of a 1550 nm VCSOA (OE)
Related Conference Papers
- Discrete cavity solitons
- Ultra high-speed wavelength conversion and regeneration using semiconductor optical amplifiers
- All-optical 2R regeneration using a non-linear vertical cavity semiconductor optical amplifier
- Observation of Wavelength Bistability in 850nm Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs)
- First Commercial Service of a Colorless Gigabit WDM/TDM Hybrid PON System
- First Commercial Service of a Colorless Gigabit WDM/TDM Hybrid PON System
« Previous Article | Next Article »
OSA is a member of 