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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 10, Iss. 22 — Nov. 4, 2002
  • pp: 1305–1313

Observation of Raman emission in silicon waveguides at 1.54 μm

Ricardo Claps, Dimitri Dimitropoulos, Yan Han, and Bahram Jalali  »View Author Affiliations

Optics Express, Vol. 10, Issue 22, pp. 1305-1313 (2002)

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We report the first measurements of spontaneous Raman scattering from silicon waveguides. Using a 1.43 μm pump, both forward and backward scattering were measured at 1.54 μm from Silicon-On-Insulator (SOI) waveguides. From the dependence of the Stokes power vs. pump power, we extract a value of (4.1 ± 2.5) × 10-7 cm-1 Sr-1 for the Raman scattering efficiency. The results suggest that a silicon optical amplifier is within reach. The strong optical confinement in silicon waveguides is an attractive property as it lowers the pump power required for the onset of Raman scattering. The SiGe material system is also discussed.

© 2002 Optical Society of America

OCIS Codes
(230.7370) Optical devices : Waveguides
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.4480) Optoelectronics : Optical amplifiers

ToC Category:
Research Papers

Original Manuscript: September 26, 2002
Revised Manuscript: October 23, 2002
Published: November 4, 2002

Ricardo Claps, Dimitri Dimitropoulos, Yan Han, and Bahram Jalali, "Observation of Raman emission in silicon waveguides at 1.54 µm," Opt. Express 10, 1305-1313 (2002)

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