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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 11, Iss. 21 — Oct. 20, 2003
  • pp: 2679–2688

Photochemical process of divalent germanium responsible for photorefractive index change in GeO2-SiO2 glasses

Akifumi Sakoh, Masahide Takahashi , Toshinobu Yoko, Junji Nishii, Hiroaki Nishiyama, and Isamu Miyamoto  »View Author Affiliations


Optics Express, Vol. 11, Issue 21, pp. 2679-2688 (2003)
http://dx.doi.org/10.1364/OE.11.002679


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Abstract

The photoluminescence spectra of the divalent Ge (Ge2+) center in GeO2-SiO2 glasses with different photosensitivities were investigated by means of excitation-emission energy mapping. The ultraviolet light induced photorefractivity has been correlated with the local structure around the Ge2+ centers. The glasses with a larger photorefractivity tended to exhibit a greater band broadening of the singlet-singlet transition on the higher excitation energy side accompanied by an increase in the Stokes shifts. This strongly suggests the existence of highly photosensitive Ge2+ centers with higher excitation energies. It is also found that the introduction of a hydroxyl group or boron species in GeO2-SiO2 glasses under appropriate conditions modifies the local environment of Ge2+ leading to an enhanced photorefractivity.

© 2003 Optical Society of America

OCIS Codes
(160.2750) Materials : Glass and other amorphous materials
(160.5320) Materials : Photorefractive materials

ToC Category:
Research Papers

History
Original Manuscript: July 1, 2003
Revised Manuscript: October 8, 2003
Published: October 20, 2003

Citation
Akifumi Sakoh, Masahide Takahashi, Toshinobu Yoko, Junji Nishii, Hiroaki Nishiyama, and Isamu Miyamoto, "Photochemical process of divalent germanium responsible for photorefractive index change in GeO2-SiO2 glasses," Opt. Express 11, 2679-2688 (2003)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-11-21-2679


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