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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 11, Iss. 22 — Nov. 3, 2003
  • pp: 2862–2872

Anti-Stokes Raman conversion in silicon waveguides

R. Claps, V. Raghunathan, D. Dimitropoulos, and B. Jalali  »View Author Affiliations


Optics Express, Vol. 11, Issue 22, pp. 2862-2872 (2003)
http://dx.doi.org/10.1364/OE.11.002862


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Abstract

The first observation of parametric down-conversion in silicon is reported. Conversion from 1542.3nm to 1328.8nm is achieved using a CW pump laser at 1427 nm. The conversion occurs via Coherent Anti-Stokes Raman Scattering (CARS) in which two pump photons and one Stokes photon couple through a zone-center optical phonon to an anti-Stokes photon. The maximum measured Stokes/anti-Stokes power conversion efficiency is 1×10-5. The value depends on the effective pump power, the Stimulated Raman Scattering (SRS) coefficient of bulk silicon, and waveguide dispersion. It is shown that the power conversion efficiency is a strong function of phase mismatch inside the waveguide.

© 2003 Optical Society of America

OCIS Codes
(230.7370) Optical devices : Waveguides
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.4480) Optoelectronics : Optical amplifiers

ToC Category:
Research Papers

History
Original Manuscript: August 8, 2003
Revised Manuscript: October 22, 2003
Published: November 3, 2003

Citation
R. Claps, V. Raghunathan, D. Dimitropoulos, and B. Jalali, "Anti-Stokes Raman conversion in silicon waveguides," Opt. Express 11, 2862-2872 (2003)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-11-22-2862


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