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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 12, Iss. 12 — Jun. 14, 2004
  • pp: 2774–2780

Influence of nonlinear absorption on Raman amplification in Silicon waveguides

R. Claps, V. Raghunathan, D. Dimitropoulos, and B. Jalali  »View Author Affiliations

Optics Express, Vol. 12, Issue 12, pp. 2774-2780 (2004)

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We model the TPA-induced free carrier absorption effect in silicon Raman amplifiers and quantify the conditions under which net gain may be obtained. The achievable Raman gain strongly depends on the free carrier lifetime, propagation loss, and on the effective Raman gain coefficient, through pump-induced broadening.

© 2004 Optical Society of America

OCIS Codes
(230.7370) Optical devices : Waveguides
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.4480) Optoelectronics : Optical amplifiers

ToC Category:
Research Papers

Original Manuscript: April 26, 2004
Revised Manuscript: June 3, 2004
Published: June 14, 2004

Ricardo Claps, V. Raghunathan, D. Dimitropoulos, and B. Jalali, "Influence of nonlinear absorption on Raman amplification in Silicon waveguides," Opt. Express 12, 2774-2780 (2004)

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