Raman amplification in ultrasmall silicon-on-insulator wire waveguides
Optics Express, Vol. 12, Issue 16, pp. 3713-3718 (2004)
http://dx.doi.org/10.1364/OPEX.12.003713
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Abstract
We measure stimulated Raman gain at 1550 nm in an ultrasmall SOI strip waveguide, cross-section of 0.098 µm2. We obtain signal amplification of up to 0.7 dB in the counter-propagating configuration for a sample length of 4.2 mm and using a diode pump at 1435 nm with powers of <30 mW. The Raman amplifier has a figure-of-merit (FOM) of 57.47 dB/cm/W. This work shows the feasibility of ultrasmall SOI waveguides for the development of SOI-based on-chip optical amplifiers and active photonic integrated circuits.
© 2004 Optical Society of America
OCIS Codes
(230.7370) Optical devices : Waveguides
(290.5910) Scattering : Scattering, stimulated Raman
ToC Category:
Research Papers
History
Original Manuscript: June 29, 2004
Revised Manuscript: July 20, 2004
Published: August 9, 2004
Citation
Richard Espinola, Jerry Dadap, Richard Osgood, Jr., Sharee McNab, and Yurii Vlasov, "Raman amplification in ultrasmall silicon-on-insulator wire waveguides," Opt. Express 12, 3713-3718 (2004)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-12-16-3713
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