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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 12, Iss. 23 — Nov. 15, 2004
  • pp: 5703–5710

Analysis of Raman lasing characteristics in silicon-on-insulator waveguides

Michael Krause, Hagen Renner, and Ernst Brinkmeyer  »View Author Affiliations


Optics Express, Vol. 12, Issue 23, pp. 5703-5710 (2004)
http://dx.doi.org/10.1364/OPEX.12.005703


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Abstract

Numerical analysis predicts that continuous-wave Raman lasing is possible in silicon-on-insulator (SOI) waveguides, in spite of the detrimental presence of two-photon absorption and free-carrier absorption. We discuss in particular the dependence of the lasing characteristics of SOI Raman lasers on the effective lifetime of the free carriers generated by two-photon absorption. It is shown that the pump-power-dependent cavity losses lead to a rollover of the output-power characteristics at a certain pump-power level and that there exists an upper shutdown threshold at which the laser operation breaks down.

© 2004 Optical Society of America

OCIS Codes
(140.3550) Lasers and laser optics : Lasers, Raman
(230.6080) Optical devices : Sources
(230.7370) Optical devices : Waveguides

ToC Category:
Research Papers

History
Original Manuscript: September 24, 2004
Revised Manuscript: November 5, 2004
Published: November 15, 2004

Citation
Michael Krause, Hagen Renner, and Ernst Brinkmeyer, "Analysis of Raman lasing characteristics in silicon-on-insulator waveguides," Opt. Express 12, 5703-5710 (2004)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-12-23-5703


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