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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 12, Iss. 3 — Feb. 9, 2004
  • pp: 401–404

Improving low-temperature performance of infrared thin-film interference filters utilizing the intrinsic properties of IV–VI narrow-gap semiconductors

B. Li, S. Y. Zhang, J. C. Jiang, B. Fan, and F. S. Zhang  »View Author Affiliations


Optics Express, Vol. 12, Issue 3, pp. 401-404 (2004)
http://dx.doi.org/10.1364/OPEX.12.000401


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Abstract

Pb1-xGexTe is a pseudobinary alloy of IV–VI narrow-gap semiconductor, of which maximum refractive index corresponds to the ferroelectric phase transition. Since the temperature coefficient of refractive index can be tunable from negative to positive by changing the Ge composition, it is possible to utilize the intrinsic property in the fabrication of infrared thin-film interference filters. In this letter, we report a narrow-bandpass filter, in which Pb0.94Ge0.06Te was substituted for PbTe. It found that the low-temperature stability of the filter is obviously improved: in the temperature range of 80-300K, the shift of center wavelength with temperature is reduced from 0.48nm. K-1 to 0.23nm K-1; furthermore, the peak transmittance of filter fabricated with Pb0.94Ge0.06Te is ~3% over that fabricated with PbTe.

© 2004 Optical Society of America

OCIS Codes
(120.2440) Instrumentation, measurement, and metrology : Filters
(160.2260) Materials : Ferroelectrics
(310.3840) Thin films : Materials and process characterization
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Research Papers

History
Original Manuscript: December 17, 2003
Revised Manuscript: January 17, 2004
Published: February 9, 2004

Citation
Bin Li, S. Zhang, J. Jiang, B. Fan, and F. Zhang, "Improving low-temperature performance of infrared thin-film interference filters utilizing the intrinsic properties of IV-VI narrow-gap semiconductors," Opt. Express 12, 401-404 (2004)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-12-3-401


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References

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