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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 12, Iss. 5 — Mar. 8, 2004
  • pp: 859–867

Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal vertical-cavity surface-emitting lasers

Jong-Hwa Baek, Dae-Sung Song, In-Kag Hwang, Kum-Hee Lee, Y. H. Lee, Young-gu Ju, Takashi Kondo, Tomoyuki Miyamoto, and Fumio Koyama  »View Author Affiliations


Optics Express, Vol. 12, Issue 5, pp. 859-867 (2004)
http://dx.doi.org/10.1364/OPEX.12.000859


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Abstract

Robust and tolerant single-transverse-mode photonic crystal GaInAs vertical-cavity surface-emitting lasers are fabricated and investigated. Triangular lattice patterns of rectangular air holes of various etch-depths are introduced in the top mirror. The stable single-transverse-mode operation is observed with a large margin of allowance in the etch depth (t=2.5±0.6 µm). This stable mode selection mechanism is explained by the mode competition between the two lowest photonic crystal guided modes that are influenced by both the index guiding effect and the etch-depth dependent modal losses.

© 2004 Optical Society of America

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(250.7260) Optoelectronics : Vertical cavity surface emitting lasers

ToC Category:
Research Papers

History
Original Manuscript: February 3, 2004
Revised Manuscript: February 25, 2004
Published: March 8, 2004

Citation
Jong-Hwa Baek, Dae-Sung Song, In-Kag Hwang, Hum-Hee Lee, Y. Lee, Young-gu Ju, Takashi Kondo, Tomoyuki Miyamoto, and Fumio Koyama, "Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal vertical-cavity surface-emitting lasers," Opt. Express 12, 859-867 (2004)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-12-5-859


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References

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