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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 12, Iss. 8 — Apr. 19, 2004
  • pp: 1622–1631

Losses in single-mode silicon-on-insulator strip waveguides and bends

Yurii A. Vlasov and Sharee J. McNab  »View Author Affiliations


Optics Express, Vol. 12, Issue 8, pp. 1622-1631 (2004)
http://dx.doi.org/10.1364/OPEX.12.001622


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Abstract

We report the fabrication and accurate measurement of propagation and bending losses in single-mode silicon waveguides with submicron dimensions fabricated on silicon-on-insulator wafers. Owing to the small sidewall surface roughness achieved by processing on a standard 200mm CMOS fabrication line, minimal propagation losses of 3.6±0.1dB/cm for the TE polarization were measured at the telecommunications wavelength of 1.5µm. Losses per 90° bend are measured to be 0.086±0.005dB for a bending radius of 1µm and as low as 0.013±0.005dB for a bend radius of 2µm. These record low numbers can be used as a benchmark for further development of silicon microphotonic components and circuits.

© 2004 Optical Society of America

OCIS Codes
(230.7370) Optical devices : Waveguides
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Focus Issue: Photonic crystals and holey fibers

History
Original Manuscript: February 3, 2004
Revised Manuscript: April 12, 2004
Published: April 19, 2004

Citation
Yurii Vlasov and Sharee McNab, "Losses in single-mode silicon-on-insulator strip waveguides and bends," Opt. Express 12, 1622-1631 (2004)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-12-8-1622


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