Thermal oxide based silica ridge waveguide
Optics Express, Vol. 12, Issue 8, pp. 1753-1758 (2004)
http://dx.doi.org/10.1364/OPEX.12.001753
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Abstract
A silica planar waveguide structure, where a ridge waveguide resides on a vacuum gap, was invented. The silica layer, which was fabricated through thermal oxidation at 1150 °C, had an excellent optical index uniformity on the order of 3×10-5 @1550 nm, and a thickness uniformity of 10 nm at a thickness of 10 µm. Straight waveguide with low insertion loss was demonstrated. Improved thermal efficiency of this structure to cause phase change was discussed in comparison to the conventional channel waveguide structure. Finally, the limitation of this technology to make complex device structures was also explored.
© 2004 Optical Society of America
OCIS Codes
(130.1750) Integrated optics : Components
(130.3120) Integrated optics : Integrated optics devices
(130.3130) Integrated optics : Integrated optics materials
ToC Category:
Research Papers
History
Original Manuscript: February 23, 2004
Revised Manuscript: April 7, 2004
Published: April 19, 2004
Citation
D. Zheng, J. Fong, Z. Shao, Y. Lian, and C. Wu, "Thermal oxide based silica ridge waveguide," Opt. Express 12, 1753-1758 (2004)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-12-8-1753
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References
- K. Okamoto, ???PLC Technologies: present and future,??? in Proc. SPIE 4532, 86-92 ( 2001). [CrossRef]
- B.R. Singh, ???Silica based planar lightwave circuits on silicon platform,??? in Proc. SPIE 3975, 319-326 (2000).
- Y.P. Li, and C.H. Henry, ???Silica-based integrated circuits,??? IEE Proc. Optoelectronics 143, 263-280 (1996). [CrossRef]
- M. Kawachi, ???Recent progress in silica-based planar lightwave circuits on silicon,??? IEE Proc. Optoelectronics 143, 257-262(1996). [CrossRef]
- Q.-Y. Tong, U. Gösele, Semiconductor wafer bonding: science and technology (John Wiley, New York, 1999).
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