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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 13, Iss. 10 — May. 16, 2005
  • pp: 3754–3764

Optical sensor based on resonant porous silicon structures

Jarkko J. Saarinen, Sharon M. Weiss, Philippe M. Fauchet, and J. E. Sipe  »View Author Affiliations


Optics Express, Vol. 13, Issue 10, pp. 3754-3764 (2005)
http://dx.doi.org/10.1364/OPEX.13.003754


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Abstract

We propose a new design for an optical sensor based on porous silicon structures. We present an analysis based on a pole expansion, which allows for the easy identification of the parameters important for the operation of the sensor, and the phenomenological inclusion of scattering losses. The predicted sensitivity of the sensor is much greater than detectors utilizing surface plasmon resonance.

© 2005 Optical Society of America

OCIS Codes
(230.3990) Optical devices : Micro-optical devices
(230.5750) Optical devices : Resonators
(240.6680) Optics at surfaces : Surface plasmons

ToC Category:
Research Papers

History
Original Manuscript: March 3, 2005
Revised Manuscript: May 3, 2005
Published: May 16, 2005

Citation
Jarkko Saarinen, Sharon Weiss, Philippe Fauchet, and J. E. Sipe, "Optical sensor based on resonant porous silicon structures," Opt. Express 13, 3754-3764 (2005)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-13-10-3754


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References

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  21. For an overlayer thickness l with an index nl the effective Fresnel coefficient �?r51 from the prism in Fig. 1a is exactly given by Eq. (9) but with r31 replaced by �?r31 = (r3l+rl1 exp(2iwll))/(1-rl3rl1 exp(2iwll)) in an obvious notation. Using Fresnel coefficient identities, that new equation can be written as �?r31 = (r31 + �?r1l)/(1+r31 �?r1l), where �?r1l = (r1l +rl1 exp(2iwll))/(1-r2 l1 exp(2iwll)). Using the pole approximation (11) for r31 in this new expression for �?r51, we predict a shift of the resonance dip due to the overlayer which deviates from an exact calculation of that shift by only 0.002.

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