OSA's Digital Library

Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 13, Iss. 10 — May. 16, 2005
  • pp: 3835–3840

Sub-picosecond all-optical gate utilizing aN intersubband transition

Norio Iizuka, Kei Kaneko, and Nobuo Suzuki  »View Author Affiliations

Optics Express, Vol. 13, Issue 10, pp. 3835-3840 (2005)

View Full Text Article

Enhanced HTML    Acrobat PDF (136 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



All-optical gate-switch operation utilizing GaN intersubband transition has been achieved by reducing edge dislocation density in the epitaxial layers. The diminution of dislocation was accomplished by MBE regrowth on an MOCVD-grown layer. Excess propagation loss for transverse magnetic polarization decreased due to the reduction of the dislocation. By the improvement of the propagation property, sub-picosecond all-optical gate with an extinction ratio of more than 10 dB was accomplished with an input pulse energy of 150 pJ. Moreover, the insertion loss with the switch on was improved.

© 2005 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(320.7080) Ultrafast optics : Ultrafast devices

ToC Category:
Research Papers

Original Manuscript: January 27, 2005
Revised Manuscript: April 25, 2005
Published: May 16, 2005

Norio Iizuka, Kei Kaneko, and Nobuo Suzuki, "Sub-picosecond all-optical gate utilizing aN intersubband transition," Opt. Express 13, 3835-3840 (2005)

Sort:  Journal  |  Reset  


  1. S. Noda, T. Uemura, T. Yamashita, and A. Sasaki, �??All-optical modulation using an n-doped quantum-well structure,�?? J. Appl. Phys. 68, 6529-6531 (1990). [CrossRef]
  2. T. Akiyama, N. Georgiev, T. Mozume, H. Yoshida, A. V. Gopal, and O. Wada, �??Nonlinearity and recovery time of 1.55 μm intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,�?? Electron. Lett. 37, 129-130 (2001). [CrossRef]
  3. R. Akimoto, K. Akita, F. Sasaki, and T. Hasama, �??Sub-picosecond electron relaxation of near-infrared intersubband transition in n-doped (CdS/ZnSe)/BeTe quantum wells,�?? Appl. Phys. Lett. 81, 2998-3000 (2002). [CrossRef]
  4. H. M. Ng, C. Gmachl. S. N. G. Chu, and A. Y. Cho, �??Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 μm intersubband transitions,�?? J. Crystal Growth 220, 432-438 (2000). [CrossRef]
  5. N. Suzuki, and N. Iizuka, �??Feasibility study on ultrafast nonlinear optical properties of 1.55-μm intersubband transition in AlGaN/GaN quantum wells,�?? Jpn. J. Appl. Phys. 36, L1006-1008 (1997). [CrossRef]
  6. C. Gmachl, S. V. Frolov, H. M. Ng, S. N. G. Chu, and A. Y. Cho, �??Sub-picosecond electron scattering time for λ~1.55 μm intersubband transition in GaN/AlGaN multiple quantum wells,�?? Electron. Lett. 37, 378-380 (2001) [CrossRef]
  7. N. Iizuka, K. Kaneko, and N. Suzuki, �??Near-infrared intersubband transition in GaN/ALN quantum wells grown by molecular beam epitaxy,�?? Appl. Phys. Lett. 81, 1803-1805 (2002) [CrossRef]
  8. J. Hamazaki, S. Matsui, H. Kunugita, K. Ema, H. Kanazawa, T. Tachibana, A. Kikuchi, and K. Kishino, �??Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells,�?? Appl. Phys. Lett. 84, 1102-1104 (2004) [CrossRef]
  9. K. Kishino, A. Kikuchi, H. Kanazawa, and T. Tachibana, �??Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm,�?? Appl. Phys. Lett. 81, 1234-1236 (2002) [CrossRef]
  10. N. Iizuka, K. Kaneko, and N. Suzuki, �??Sub-picosecond modulation by intersubband transition in ridge waveguide with GaN/AlN quantum wells,�?? Electron. Lett. 40, 962-963 (2004) [CrossRef]
  11. N. Iizuka, K. Kaneko, and N. Suzuki, �??Effect of edge dislocation of polarization dependent loss of MBE-grown GaN ridge waveguide at optical communication wavelengths,�?? presented at 2004 MRS Fall Meeting, Boston, MA, 29 Nov. �??3 Dec. 2004
  12. W. T. Reed, �??Theory of Dislocation in Germanium,�?? Phil. Magn. 45, 775-796 (1954)
  13. H. M. Ng, D. Doppalapudi, D. Korakakis, R. Singh, and T. D. Moustakas, �??MBE growth and doping III-V nitrides,�?? J. Crystal Growth, 189/190, 349-353 (1998) [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


Fig. 1. Fig. 2. Fig. 3.
Fig. 4.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited