Sub-picosecond all-optical gate utilizing aN intersubband transition
Optics Express, Vol. 13, Issue 10, pp. 3835-3840 (2005)
http://dx.doi.org/10.1364/OPEX.13.003835
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Abstract
All-optical gate-switch operation utilizing GaN intersubband transition has been achieved by reducing edge dislocation density in the epitaxial layers. The diminution of dislocation was accomplished by MBE regrowth on an MOCVD-grown layer. Excess propagation loss for transverse magnetic polarization decreased due to the reduction of the dislocation. By the improvement of the propagation property, sub-picosecond all-optical gate with an extinction ratio of more than 10 dB was accomplished with an input pulse energy of 150 pJ. Moreover, the insertion loss with the switch on was improved.
© 2005 Optical Society of America
OCIS Codes
(160.6000) Materials : Semiconductor materials
(320.7080) Ultrafast optics : Ultrafast devices
ToC Category:
Research Papers
History
Original Manuscript: January 27, 2005
Revised Manuscript: April 25, 2005
Published: May 16, 2005
Citation
Norio Iizuka, Kei Kaneko, and Nobuo Suzuki, "Sub-picosecond all-optical gate utilizing aN intersubband transition," Opt. Express 13, 3835-3840 (2005)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-13-10-3835
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References
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