OSA's Digital Library

Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 13, Iss. 11 — May. 30, 2005
  • pp: 4175–4179

Analysis of position-dependent light extraction of GaN-based LEDs

Tsung-Xian Lee, Chao-Ying Lin, Shih-Hsin Ma, and Ching-Cherng Sun  »View Author Affiliations

Optics Express, Vol. 13, Issue 11, pp. 4175-4179 (2005)

View Full Text Article

Enhanced HTML    Acrobat PDF (103 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.

© 2005 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes
(230.3990) Optical devices : Micro-optical devices

ToC Category:
Research Papers

Original Manuscript: May 2, 2005
Revised Manuscript: May 18, 2005
Published: May 30, 2005

Tsung-Xian Lee, Chao-Ying Lin, Shih-Hsin Ma, and Ching-Cherng Sun, "Analysis of position-dependent light extraction of GaN-based LEDs," Opt. Express 13, 4175-4179 (2005)

Sort:  Journal  |  Reset  


  1. A. Zukauskas, M. S. Shur, and R. Caska, Introduction to Solid-state Lighting, (John Wiley & Sons, New York, 2002).
  2. Daniel A. Steigerwald, Jerome C. Bhat, Dave Collins, Robert M. Fletcher, Mari Ochiai Holcomb, Michael J. Ludowise, Paul S. Martin, and Serge L. Rudaz, �??Illumination with solid state lighting technology,�?? IEEE J. Select. Topics Quantum Electron. 8, 310, (2002). [CrossRef]
  3. M. R. Krames, M. Ochiai-Holcomb, G. E. Hofler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J-W. Huang, S.A. Stockman, F. A. Kish, and M. G. Craford, �??High-power truncated-pyramid (Al0.5 Ga 1 - x )0.5 In0.5 P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,�?? Appl. Phys. Lett. 75, 2365 (1999). [CrossRef]
  4. X. Guo, Y.-L. Li, and E. F. Schubert, �??Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry,�?? Appl. Phys. Lett. 79, 1936 (2001). [CrossRef]
  5. C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, �??Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface,�?? Appl. Phys. Lett. 93, 9383 (2003).
  6. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. Danbaars, and S. Nakamura, �??Increase in the extraction efficiency of GaN-base light emitting diodes via surface roughening,�?? Appl. Phys. Lett. 84, 855 (2004). [CrossRef]
  7. Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. Danbaars and S. Nakamura, �??Roughening Hexagonal surface morphology on Laser lift-off (LLO) N face GaN with simple photo-enhanced chemical wet etching,�?? Jap. J. Appl. Phys. 43, 637, (2004). [CrossRef]
  8. C. C. Sun, C. Y. Lin, T. X. Lee, and T. H. Yang, �??Enhancement of light extraction of GaN-based LED with introducing micro-structure array, �?? Opt. Eng. 43, 1700 (2004). [CrossRef]
  9. S. J. Lee, �??Analysis of light-emitting diode by Monte Carlo photo simulation,�?? Appl. Opt. 40, 1427 (2001). [CrossRef]
  10. <a href="http://www.osram-os.com/.">http://www.osram-os.com/.</a>

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited