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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 13, Iss. 11 — May. 30, 2005
  • pp: 4175–4179

Analysis of position-dependent light extraction of GaN-based LEDs

Tsung-Xian Lee, Chao-Ying Lin, Shih-Hsin Ma, and Ching-Cherng Sun  »View Author Affiliations


Optics Express, Vol. 13, Issue 11, pp. 4175-4179 (2005)
http://dx.doi.org/10.1364/OPEX.13.004175


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Abstract

The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.

© 2005 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes
(230.3990) Optical devices : Micro-optical devices

ToC Category:
Research Papers

History
Original Manuscript: May 2, 2005
Revised Manuscript: May 18, 2005
Published: May 30, 2005

Citation
Tsung-Xian Lee, Chao-Ying Lin, Shih-Hsin Ma, and Ching-Cherng Sun, "Analysis of position-dependent light extraction of GaN-based LEDs," Opt. Express 13, 4175-4179 (2005)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-13-11-4175


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