Recent progress in improving low-temperature stability of infrared thin-film interference filters
Optics Express, Vol. 13, Issue 17, pp. 6376-6380 (2005)
http://dx.doi.org/10.1364/OPEX.13.006376
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Abstract
The degeneration of performance of an optical thin-film interference filter associated with the change of temperature is not acceptable. In this letter, we report a new progress in improving low-temperature performance of infrared narrow-band filters by using Pb1-xGexTe initial bulk alloy with appropriate Ge concentration x. It can be found that there exists a critical temperature for the investigated narrowband filter, at which the temperature coefficient of filter is exactly zero. Therefore, by means of controlling the composition in (Pb1-xGex)1-yTey layers, the temperature coefficient of filter can be tunable at the designated low-temperature. In our present investigation, when temperature varies from 300 to 85 K, a shift of peak wavelength of 0.05935 nm.K-1 has been achieved.
© 2005 Optical Society of America
OCIS Codes
(120.2440) Instrumentation, measurement, and metrology : Filters
(160.2260) Materials : Ferroelectrics
(310.3840) Thin films : Materials and process characterization
(310.6860) Thin films : Thin films, optical properties
ToC Category:
Research Papers
History
Original Manuscript: July 15, 2005
Revised Manuscript: August 4, 2005
Published: August 22, 2005
Citation
B. Li, S. Zhang, J. Jiang, D. Q. Liu, and F. Zhang, "Recent progress in improving low-temperature stability of infrared thin-film interference filters," Opt. Express 13, 6376-6380 (2005)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-13-17-6376
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References
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