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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 13, Iss. 17 — Aug. 22, 2005
  • pp: 6651–6656

Sub-100 nm nanostructuring of silicon by ultrashort laser pulses

R Le Harzic, H. Schuck, D. Sauer, T. Anhut, I. Riemann, and K. König  »View Author Affiliations


Optics Express, Vol. 13, Issue 17, pp. 6651-6656 (2005)
http://dx.doi.org/10.1364/OPEX.13.006651


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Abstract

Techniques based on laser scanning microscopes for nanoprocessing of periodic structures on silicon with ultra-short laser pulses have been developed. Ripples of 800–900 nm spacing were obtained after laser irradiation at a wavelength of 1040 nm, a repetition rate of 10 kHz and a fluence of 2 J/cm2 in air. Smaller features of 70–100nm spacing were achieved in oil at a wavelength of 800 nm, a repetition rate of 90 MHz and a fluence of 200–300 mJ/cm2 by using a high numerical focusing objective.

© 2005 Optical Society of America

OCIS Codes
(050.2770) Diffraction and gratings : Gratings
(140.3390) Lasers and laser optics : Laser materials processing
(140.7090) Lasers and laser optics : Ultrafast lasers
(160.6000) Materials : Semiconductor materials
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Research Papers

History
Original Manuscript: July 6, 2005
Revised Manuscript: August 17, 2005
Published: August 22, 2005

Citation
Ronan Le Harzic, H. Schuck, D Sauer, T. Anhut, I. Riemann, and K. König, "Sub-100 nm nanostructuring of silicon by ultrashort laser pulses," Opt. Express 13, 6651-6656 (2005)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-13-17-6651


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