Sub-100 nm nanostructuring of silicon by ultrashort laser pulses
Optics Express, Vol. 13, Issue 17, pp. 6651-6656 (2005)
http://dx.doi.org/10.1364/OPEX.13.006651
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Abstract
Techniques based on laser scanning microscopes for nanoprocessing of periodic structures on silicon with ultra-short laser pulses have been developed. Ripples of 800–900 nm spacing were obtained after laser irradiation at a wavelength of 1040 nm, a repetition rate of 10 kHz and a fluence of 2 J/cm2 in air. Smaller features of 70–100nm spacing were achieved in oil at a wavelength of 800 nm, a repetition rate of 90 MHz and a fluence of 200–300 mJ/cm2 by using a high numerical focusing objective.
© 2005 Optical Society of America
OCIS Codes
(050.2770) Diffraction and gratings : Gratings
(140.3390) Lasers and laser optics : Laser materials processing
(140.7090) Lasers and laser optics : Ultrafast lasers
(160.6000) Materials : Semiconductor materials
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
ToC Category:
Research Papers
History
Original Manuscript: July 6, 2005
Revised Manuscript: August 17, 2005
Published: August 22, 2005
Citation
Ronan Le Harzic, H. Schuck, D Sauer, T. Anhut, I. Riemann, and K. König, "Sub-100 nm nanostructuring of silicon by ultrashort laser pulses," Opt. Express 13, 6651-6656 (2005)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-13-17-6651
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