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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 13, Iss. 22 — Oct. 31, 2005
  • pp: 8760–8765

Surface structure silicon based impact-ionization multiplier for optical detection

Hong-Wei Lee, Joshua L. Beutler, and Aaron R. Hawkins  »View Author Affiliations


Optics Express, Vol. 13, Issue 22, pp. 8760-8765 (2005)
http://dx.doi.org/10.1364/OPEX.13.008760


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Abstract

This paper presents an innovative solid-state current amplifier based on impact ionization. The operation principle, fabrication, and test results for this device are reported. This amplifier was built on a silicon surface using standard microelectronics processes including ion implantation. Testing was performed by connecting the device to both silicon and indium-gallium-arsenide photodiodes to demonstrate its compatibility with arbitrary current sources. Current gains above 100 along with pre-amplified leakage currents of less than 10 nA were measured.

© 2005 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6070) Detectors : Solid state detectors
(060.4510) Fiber optics and optical communications : Optical communications
(260.3230) Physical optics : Ionization

ToC Category:
Research Papers

History
Original Manuscript: September 1, 2005
Revised Manuscript: October 14, 2005
Published: October 31, 2005

Citation
Hong-Wei Lee, Joshua Beutler, and Aaron Hawkins, "Surface structure silicon based impact-ionization multiplier for optical detection," Opt. Express 13, 8760-8765 (2005)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-13-22-8760


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References

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