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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 13, Iss. 22 — Oct. 31, 2005
  • pp: 8845–8854

A sub-micron depletion-type photonic modulator in Silicon On Insulator

F. Y. Gardes, G. T. Reed, N.G. Emerson, and C.E. Png  »View Author Affiliations

Optics Express, Vol. 13, Issue 22, pp. 8845-8854 (2005)

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We provide detailed analysis of a four terminal p+pnn+ optical modulator integrated into a silicon-on-insulator (SOI) rib waveguide. The proposed depletion device has been designed to approach birefringence free operation. The modulation mechanism is the carrier depletion effect in a pn junction; carrier losses induced are minimised in our design and because we use a depletion device, the device is insensitive to carrier lifetime. The rise time and fall time of the proposed device have both been calculated to be 7 ps for a reverse bias of only 5 volts. A maximum excess loss of 2 dB is predicted for TE and TM due to the presence of p type and n type carriers in the waveguide.

© 2005 Optical Society of America

OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Research Papers

Original Manuscript: September 22, 2005
Revised Manuscript: October 17, 2005
Published: October 31, 2005

F. Gardes, G. Reed, N. Emerson, and C. Png, "A sub-micron depletion-type photonic modulator in Silicon On Insulator," Opt. Express 13, 8845-8854 (2005)

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