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Optics Express

Optics Express

  • Editor: Micha
  • Vol. 13, Iss. 23 — Nov. 14, 2005
  • pp: 9639–9644

All-optoelectronic terahertz system using low-temperature-grown InGaAs photomixers

C. Baker, I. S. Gregory, M. J. Evans, W. R. Tribe, E. H. Linfield, and M. Missous  »View Author Affiliations

Optics Express, Vol. 13, Issue 23, pp. 9639-9644 (2005)

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We demonstrate, for the first time, an all-optoelectronic continuous-wave terahertz photomixing system that uses low-temperature grown InGaAs devices both for emitters and coherent homodyne detectors. The system is compatible with fiber-optic excitation wavelengths, and we compare the performance to the more common LT-GaAs photomixers.

© 2005 Optical Society of America

OCIS Codes
(160.5140) Materials : Photoconductive materials
(320.7080) Ultrafast optics : Ultrafast devices

ToC Category:
Research Papers

Original Manuscript: September 7, 2005
Revised Manuscript: November 9, 2005
Published: November 14, 2005

Colin Baker, I. Gregory, M. Evans, W. Tribe, E. Linfield, and M. Missous, "All-optoelectronic terahertz system using low-temperature-grown InGaAs photomixers," Opt. Express 13, 9639-9644 (2005)

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  1. Y. C. Shen, P. C. Upadhya,, A. G. Davies, I. S. Gregory, C. Baker, W. R. Tribe, M. J. Evans, H. E. Beere, and E. H. Linfield, �??Generation and detection of ultrabroadband terahertz radiation using photoconductive emitters and receivers,�?? Appl. Phys. Lett. 85, 164-166 (2004) [CrossRef]
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  4. I. S. Gregory, C. Baker, W. R. Tribe, M. J. Evans, H. E. Beere, E. H. Linfield, A. G. Davies, and M. Missous, �??High resistivity annealed low-temperature GaAs with 100 fs lifetimes,�?? Appl. Phys. Lett. 83, 4199-5201 (2003) [CrossRef]
  5. M. Tani, K. -S. Lee, and X. -C. Zhang, �??Detection of terahertz radiation with low-temperature-grown GaAsbased photoconductive antenna using 1.55 µm probe,�?? Appl. Phys. Lett. 77, 1396-1398 (2000) [CrossRef]
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  11. K. A. McIntosh, E. R. Brown, K. B. Nichols, O. B. McMahon, W. F. DiNatele, and T. M. Lyszczarz, �??Terahertz photomixing with diode lasers in low-temperature-grown GaAs,�?? Appl. Phys. Lett. 67, 3844-3846 (1995) [CrossRef]
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