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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 13, Iss. 25 — Dec. 12, 2005
  • pp: 10075–10084

Analyzing integrated circuits at work with a picosecond time-gated imager

D. Comelli, C. D’Andrea, G. Valentini, R. Cubeddu, R. Casiraghi, and D. Cantarelli  »View Author Affiliations


Optics Express, Vol. 13, Issue 25, pp. 10075-10084 (2005)
http://dx.doi.org/10.1364/OPEX.13.010075


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Abstract

A system based on a picosecond time-gated image intensifier is proposed for non-contact testing of CMOS circuits. The apparatus allows one to record the temporal evolution of the luminescence emitted during transistor switching as a function of the position inside the chip. The system is characterized by an intrinsic parallelism in the spatial dimensions. This feature is noticeable for studying wide sections of complex circuits, like microprocessors and random access memories, where multiple electrical events occur simultaneously. Experiments on a CMOS inverter chain and on a static memory have been carried out, in order to demonstrate the applicability of a picosecond time-gated imager to circuit analysis.

© 2005 Optical Society of America

OCIS Codes
(120.4630) Instrumentation, measurement, and metrology : Optical inspection
(260.3800) Physical optics : Luminescence

ToC Category:
Research Papers

Citation
D. Comelli, C. D'Andrea, G. Valentini, R. Cubeddu, R. Casiraghi, and D. Cantarelli, "Analyzing integrated circuits at work with a picosecond time-gated imager," Opt. Express 13, 10075-10084 (2005)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-13-25-10075


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References

  1. J. T. L. Thong, Electron Beam Testing Technology (Plenum, New York, 1993).
  2. M. Paniccia, R. M. Rao, and W. M. Yee, "Optical probing of flip chip packaged microprocessors," J. Vac. Sci. Technol. B 16, 3625-3630 (1998). [CrossRef]
  3. R. Desplats, F. Beaudoin, P. Perdu, P. Poirier, D. Tremouilles, M. Bafleur, and D. Lewis, "Backside localization of current leakage faults using thermal laser stimulation," Microelectronics Reliability 41, 1539-1544 (2001). [CrossRef]
  4. The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, 1993).
  5. S. Tam, and C. Hu, "Hot electron induced photon and photocarrier generation in silicon MOSFET's," IEEE Trans. Electron Devices ED-31, 1264-1273 (1984). [CrossRef]
  6. Y. Uraoka, N. Tsustsu, T. Morii, and K. Tsuji, "Hot carrier evaluation of MOSFET's in ULSI circuits using the photon emission method," IEEE Trans. Electron Devices 40, 1426-1431 (1993). [CrossRef]
  7. S. Villa, A. Lacaita, and A. Pacelli, "Photon emission from hot electrons in silicon," Phys Rev. 52, 10992-10999 (1995).
  8. A. Lacaita, F. Zappa, S. Bigliardi, and M. Manfredi, "On the bremsstrahlung origin of hot-carrier induced photons in silicon devices," IEEE Trans. Electron Devices 40, 577 (1993). [CrossRef]
  9. T. H. Ng, W. K. Chim, D. S. H. Chan, J. C. H. Phang, Y. Y. Liu, C. L. Lou, S. E. Leang, and J. M. Tao, "An integrated (automated) photon emission microscope and MOSFET characterization system for combined microscopic and macroscopic device analysis," in Proceeding IPFA, pp. 113-118.
  10. <a href="http://sales.hamamatsu.com/assets/pdf/hpspdf/e_phemos.pdf">http://sales.hamamatsu.com/assets/pdf/hpspdf/e_phemos.pdf</a>.
  11. J. C. Tsang, J. A. Kash, and D. P. Vallett, "Picosecond imaging circuit analysis," IBM J. Res. & Dev. 44, 583-603 (2000). [CrossRef]
  12. S. Charbonneau, L. B. Allard, J. F. Young, D. Dick, and B. J. Kyle, "Two-dimensional time-resolved imaging with 100-ps resolution using a resistive anode photomultiplier tube," Rev. Sci. Instrum. 63, 5315-5319 (1992). [CrossRef]
  13. J. A. Kash, and J. C. Tsang, "Hot luminescence from CMOS circuits: a picosecond probe of internal timing," Phys. Status Solidi B 204, 507-516 (1997). [CrossRef]
  14. J. A. Kash, and J. C. Tsang, "Dynamic internal testing of CMOS circuits using hot luminescence," IEEE Electr. Device Letters 18, 330-332 (1997). [CrossRef]
  15. F. Stellari, and P. L. Song, "Testing of ultra low voltage VLSI chips using the superconducting single-photon detector (SSPD)," Microelectronics Reliability 44, 1663-1668 (2004). [CrossRef]
  16. F. Stellari, F. Zappa, S. Cova, C. Porta, and J. C. Tsang, "High-speed CMOS circuit testing by 50 ps time-resolved luminescence measurements," IEEE Trans. Electron Devices 48, 2830-2835 (2001). [CrossRef]
  17. F. Stellari, A. Tosi, F. Zappa, and S. Cova, "CMOS circuit testing via time-resolved luminescence measurements and simulations," IEEE Trans. Electron Devices 53, 163-169 (2004).
  18. <a href="http://www.kentech.co.uk/imagers.html">http://www.kentech.co.uk/imagers.html</a>.

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