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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 13, Iss. 25 — Dec. 12, 2005
  • pp: 10102–10108

Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits

Gunther Roelkens, Joost Brouckaert, Dirk Taillaert, Pieter Dumon, Wim Bogaerts, Dries Van Thourhout, Roel Baets, Richard Nötzel, and Meint Smit  »View Author Affiliations


Optics Express, Vol. 13, Issue 25, pp. 10102-10108 (2005)
http://dx.doi.org/10.1364/OPEX.13.010102


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Abstract

The integration of optical functionalities on a chip has been a long standing goal in the optical community. Given the call for more integration, Silicon-on-Insulator (SOI) is a material system of great interest. Although mature CMOS technology can be used for the fabrication of passive optical functionality, particular photonic functions like efficient light emission still require III-V semiconductors. We present the technology for heterogeneous integration of III-V semiconductor optical components and SOI passive optical components using benzocyclobutene (BCB) die to wafer bonding. InP/InGaAsP photodetectors on SOI waveguide circuits were fabricated. The developed process is compatible with the fabrication of InP/InGaAsP light emitters on SOI.

© 2005 Optical Society of America

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(220.4610) Optical design and fabrication : Optical fabrication

ToC Category:
Research Papers

Citation
Gunther Roelkens, Joost Brouckaert, Dirk Taillaert, Pieter Dumon, Wim Bogaerts, Dries Van Thourhout, Roel Baets, Richard Nötzel, and Meint Smit, "Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits," Opt. Express 13, 10102-10108 (2005)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-13-25-10102


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References

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