Demonstration of directly modulated silicon Raman laser
Optics Express, Vol. 13, Issue 3, pp. 796-800 (2005)
http://dx.doi.org/10.1364/OPEX.13.000796
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Abstract
The first Raman laser with intra-cavity electronic switching is demonstrated. Digital control of intra-cavity gain is attained by using a diode gain cavity. In contrast to traditional Raman lasers, the Raman laser reported here is made from pure silicon and can be directly modulated to transmit data. Room temperature operation with 2.5W peak laser output power is demonstrated.
© 2005 Optical Society of America
OCIS Codes
(140.3550) Lasers and laser optics : Lasers, Raman
(140.5960) Lasers and laser optics : Semiconductor lasers
(190.4390) Nonlinear optics : Nonlinear optics, integrated optics
(230.4320) Optical devices : Nonlinear optical devices
(230.7370) Optical devices : Waveguides
(250.5300) Optoelectronics : Photonic integrated circuits
ToC Category:
Research Papers
History
Original Manuscript: January 4, 2005
Revised Manuscript: January 21, 2005
Published: February 7, 2005
Citation
Ozdal Boyraz and Bahram Jalali, "Demonstration of directly modulated silicon Raman laser," Opt. Express 13, 796-800 (2005)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-13-3-796
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References
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