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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 13, Iss. 5 — Mar. 7, 2005
  • pp: 1696–1701

Characterization of a highly photorefractive RF-sputtered SiO2-GeO2 waveguide

S. Sebastiani, G. Nunzi Conti, S. Pelli, G. C. Righini, A. Chiasera, M. Ferrari, and C. Tosello  »View Author Affiliations

Optics Express, Vol. 13, Issue 5, pp. 1696-1701 (2005)

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We present the characterization of highly photorefractive Er3+/Yb3+-doped 75SiO2-25GeO2 planar waveguides, single mode at 1550 nm, deposited by radio-frequency-magnetron-sputtering (RFMS) technique. Details of the deposition process are reported. The material presents an intense absorption band (α≈103÷104 cm-1) in the UV region. Irradiations by a KrF excimer laser source at λ=248 nm have produced large positive (up to 3·10-3) refractive index changes, without the need of particular sensitization procedures. Direct measurements of UV photo-induced volume densification demonstrates that glass compaction accounts for large part of the refractive index change. Highly efficient photo-induced phase gratings have thus been fabricated in the waveguide.

© 2005 Optical Society of America

OCIS Codes
(160.2750) Materials : Glass and other amorphous materials
(160.5320) Materials : Photorefractive materials
(310.2790) Thin films : Guided waves

ToC Category:
Research Papers

Original Manuscript: December 16, 2004
Revised Manuscript: February 25, 2005
Published: March 7, 2005

S. Sebastiani, G. Nunzi Conti, S. Pelli, G. Righini, A. Chiasera, M. Ferrari, and C. Tosello, "Characterization of a highly photorefractive RF-sputtered SiO2-GeO2 waveguide," Opt. Express 13, 1696-1701 (2005)

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