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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 13, Iss. 7 — Apr. 4, 2005
  • pp: 2459–2466

Raman amplification and lasing in SiGe waveguides

Ricardo Claps, Varun Raghunathan, Ozdal Boyraz, Prakash Koonath, Dimitrios Dimitropoulos, and Bahram Jalali  »View Author Affiliations

Optics Express, Vol. 13, Issue 7, pp. 2459-2466 (2005)

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We describe the first observation of spontaneous Raman emission, stimulated amplification, and lasing in a SiGe waveguide. A pulsed optical gain of 16dB and a lasing threshold of 25 W peak pulse power (20 mW average) is observed for a Si1-xGex waveguide with x=7.5%. At the same time, a 40 GHz frequency downshift is observed in the Raman spectrum compared to that of a silicon waveguide. The spectral shift can be attributed to the combination of composition- and strain-induced shift in the optical phonon frequency. The prospect of Germanium-Silicon-on-Oxide as a flexible Raman medium is discussed.

© 2005 Optical Society of America

OCIS Codes
(040.6040) Detectors : Silicon
(230.7370) Optical devices : Waveguides
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.4480) Optoelectronics : Optical amplifiers
(290.5860) Scattering : Scattering, Raman

ToC Category:
Research Papers

Original Manuscript: February 28, 2005
Revised Manuscript: March 17, 2005
Published: April 4, 2005

Ricardo Claps, Varun Raghunathan, Ozdal Boyraz, Prakash Koonath, Dimitrios Dimitropoulos, and Bahram Jalali, "Raman amplification and lasing in SiGe waveguides," Opt. Express 13, 2459-2466 (2005)

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