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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 13, Iss. 8 — Apr. 18, 2005
  • pp: 3096–3103

Optical breakdown for silica and silicon with double femtosecond laser pulses

Y. P. Deng, X. H. Xie, H. Xiong, Y. X. Leng, C. F. Cheng, H. H. Lu, R. X. Li, and Z. Z. Xu  »View Author Affiliations

Optics Express, Vol. 13, Issue 8, pp. 3096-3103 (2005)

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The optical breakdown thresholds (OBTs) of typical dielectric and semiconductor materials are measured using double 40-fs laser pulses. By measuring the OBTs with different laser energy and different time delays between the two pulses, we found that the total energy of breakdown decrease for silica and increase for silicon with the increase of the first pulse energy.

© 2005 Optical Society of America

OCIS Codes
(260.5210) Physical optics : Photoionization
(320.7090) Ultrafast optics : Ultrafast lasers
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Research Papers

Original Manuscript: March 17, 2005
Revised Manuscript: April 6, 2005
Published: April 18, 2005

Y. P. Deng, X. H. Xie, H. Xiong, Y. X. Leng, C. F. Cheng, H. H. Lu, R. X. Li, and Z. Z. Xu, "Optical breakdown for silica and silicon with double femtosecond laser pulses," Opt. Express 13, 3096-3103 (2005)

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