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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 11 — May. 29, 2006
  • pp: 4898–4907

Terahertz response of GaN thin films

Tsong-Ru Tsai, Shi-Jie Chen, Chih-Fu Chang, Sheng-Hsien Hsu, Tai-Yuan Lin, and Cheng-Chung Chi  »View Author Affiliations

Optics Express, Vol. 14, Issue 11, pp. 4898-4907 (2006)

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The indices of refraction, extinction constants and complex conductivities of the GaN film for frequencies ranging from 0.2 to 2.5 THz are obtained using THz time-domain spectroscopy. The results correspond well with the Kohlrausch stretched exponential model. Using the Kohlrausch model fit not only provides the mobility of the free carriers in the GaN film, but also estimates the relaxation time distribution function and average relaxation time.

© 2006 Optical Society of America

OCIS Codes
(300.6270) Spectroscopy : Spectroscopy, far infrared
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Thin Films

Original Manuscript: March 9, 2006
Revised Manuscript: May 5, 2006
Manuscript Accepted: May 22, 2006
Published: May 29, 2006

Tsong-Ru Tsai, Shi-Jie Chen, Chih-Fu Chang, Sheng-Hsien Hsu, Tai-Yuan Lin, and Cheng-Chung Chi, "Terahertz response of GaN thin films," Opt. Express 14, 4898-4907 (2006)

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