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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 11 — May. 29, 2006
  • pp: 4908–4914

Formation of photoluminescent germanium nanostructures by femtosecond laser processing on bulk germanium: role of ambient gases

M. A. Seo, D. S. Kim, H. S. Kim, D. S. Choi, and S. C. Jeoung  »View Author Affiliations


Optics Express, Vol. 14, Issue 11, pp. 4908-4914 (2006)
http://dx.doi.org/10.1364/OE.14.004908


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Abstract

We present preparation of Ge nanostructures formed using by femtosecond laser pulse and origin of visible photoluminescence (PL) properties. High intensity of incident laser energy gives rise to make oxidized layer to surface of Ge nanoparticle after irradiation. Moreover, size dependent Raman shift and PL spectrums are observed with different fluences and various process surroundings. It is noted that the oxidation of Ge nanoparticle formed ambient surroundings plays an important role of photoluminescence.

© 2006 Optical Society of America

OCIS Codes
(300.6550) Spectroscopy : Spectroscopy, visible
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Ultrafast Optics

History
Original Manuscript: January 20, 2006
Revised Manuscript: May 8, 2006
Manuscript Accepted: May 13, 2006
Published: May 29, 2006

Citation
M. A. Seo, D. S. Kim, H. S. Kim, D. S. Choi, and Sae Chae Jeoung, "Formation of Photoluminescent Germanium Nanostructures by Femtosecond Laser Processing on Bulk Germanium: Role of Ambient Gases," Opt. Express 14, 4908-4914 (2006)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-11-4908


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