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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 12 — Jun. 12, 2006
  • pp: 5031–5037

Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs

Yu-Sheng Liao, Jin-Wei Shi, Y.-S. Wu, Hao-Chung Kuo, M. Feng, and Gong-Ru Lin  »View Author Affiliations

Optics Express, Vol. 14, Issue 12, pp. 5031-5037 (2006)

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We demonstrate the optical heterodyne diagnostics and high saturation power characteristics of a novel undoped InP sandwiched In0.53Ga0.47As p-i-n photodiode with a partially p-doped photoabsorption layer, which is grown on a linearly graded metamorphic InxGa1-xP buffered GaAs substrate layer and exhibits an excellent low dark current density of 3.6×10-7 A/cm2. Such a top-illuminated optical receiver exhibits an illuminating window of 60-µm diameter, which performs ultra-linear power handling capability up to 18 dBm at 1550 nm, providing a maximum photocurrent of 35 mA under a reverse bias of 9 volts. These result in extremely high current bandwidth and bandwidth-responsivity products of 350 mA∙GHz and 4.8 GHz∙A/W, respectively, at receiving frequency of up to 10 GHz.

© 2006 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(060.2380) Fiber optics and optical communications : Fiber optics sources and detectors
(120.1880) Instrumentation, measurement, and metrology : Detection
(160.1890) Materials : Detector materials

ToC Category:

Original Manuscript: February 23, 2006
Revised Manuscript: April 27, 2006
Manuscript Accepted: May 8, 2006
Published: June 12, 2006

Yu-Sheng Liao, Jin-Wei Shi, Y.-S. Wu, Hao-Chung Kuo, M. Feng, and Gong-Ru Lin, "Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs," Opt. Express 14, 5031-5037 (2006)

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