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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 13 — Jun. 26, 2006
  • pp: 6264–6272

Photonic band gaps analysis of Thue-Morse multilayers made of porous silicon

Luigi Moretti, Ilaria Rea, Lucia Rotiroti, Ivo Rendina, Giancarlo Abbate, Antigone Marino, and Luca De Stefano  »View Author Affiliations

Optics Express, Vol. 14, Issue 13, pp. 6264-6272 (2006)

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Dielectric aperiodic Thue-Morse structures up to 128 layers have been fabricated by using porous silicon technology. The photonic band gap properties of Thue-Morse multilayers have been theoretically investigated by means of the transfer matrix method and the integrated density of states. The theoretical approach has been compared and discussed with the reflectivity measurements at variable angles for both the transverse electric and transverse magnetic polarizations of light. The photonic band gap regions, wide 70 nm and 90 nm, included between 0 and 30°, have been observed for the sixth and seventh orders, respectively.

© 2006 Optical Society of America

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(160.4760) Materials : Optical properties
(230.4170) Optical devices : Multilayers

ToC Category:
Optical Devices

Original Manuscript: April 14, 2006
Revised Manuscript: June 13, 2006
Manuscript Accepted: June 14, 2006
Published: June 26, 2006

Luigi Moretti, Ilaria Rea, Lucia Rotiroti, Ivo Rendina, Giancarlo Abbate, Antigone Marino, and Luca De Stefano, "Photonic band gaps analysis of Thue-Morse multilayers made of porous silicon," Opt. Express 14, 6264-6272 (2006)

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