22-nm immersion interference lithography

doi:10.1364/OE.14.006434

22-nm immersion interference lithography

T. M. Bloomstein, Michael F. Marchant, Sandra Deneault, Dennis E. Hardy, and Mordechai Rothschild »View Author Affiliations

Optics Express, Vol. 14, Issue 14, pp. 6434-6443 (2006)
http://dx.doi.org/10.1364/OE.14.006434

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Abstract

Immersion interference lithography was used to pattern gratings with 22-nm half pitch. This ultrahigh resolution was made possible by using 157-nm light, a sapphire coupling prism with index 2.09, and a 30-nm-thick immersion fluid with index 1.82. The thickness was controlled precisely by spin-casting the fluid rather than through mechanical means. The photoresist was a diluted version of a 193-nm material, which had a 157-nm index of 1.74. An analysis of the trade-off between fluid index, absorption coefficient, gap size and throughput indicated that, among the currently available materials, employing a high-index but absorbing fluid is preferable to using a highly transparent but low-index immersion media.

OCIS Codes
(110.3960) Imaging systems : Microlithography
(120.4820) Instrumentation, measurement, and metrology : Optical systems

ToC Category:
Imaging Systems

History
Original Manuscript: May 11, 2006
Revised Manuscript: June 23, 2006
Manuscript Accepted: June 23, 2006
Published: July 10, 2006

Citation
T. M. Bloomstein, Michael F. Marchant, Sandra Deneault, Dennis E. Hardy, and Mordechai Rothschild, "22-nm immersion interference lithography," Opt. Express 14, 6434-6443 (2006)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-14-6434

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References

B. W. Smith, Y. Fan, J. Zhou, N. Lafferty, and A. Estroff, "Evanescent wave imaging in optical lithography," Proc. SPIE 6154 (2006) (to be published).
H. Sewell, J. Mulkens, D. McCafferty, L. Markoya, B. Streefkerk, and P. Gräupner, "The next phase for immersion lithography," Proc. SPIE 6154 (2006) (to be published). [CrossRef]
M. Switkes and M. Rothschild, "Immersion lithography at 157 nm," J. Vac. Sci. Technol. B 19, 2353 (2001). [CrossRef]
M. Switkes, T. M. Bloomstein, and M. Rothschild, "Patterning of sub-50 nm dense features with space-invariant 157 nm interference lithography," Appl. Phys. Lett. 20,3149 (2000). [CrossRef]
W. J. Tropf and M. E. Thomas, "Aluminum Oxide (Al2O3) Revisited," in Handbook of Optical Constants of Solids III, E. D. Palik, ed. (Academic Press, New York, 1998) pp. 653-682.
M. Colburn, B. J. Choi, S. V. Sreenivasan, R. T. Bonnecaze, and C. G. Willson, "Ramifications of lubrication theory on imprint lithography," Micro. Eng. 75, 321-329 (2004). [CrossRef]
P. H. Berning, "Theory and Calculations of Optical Thin Films," in Physics of Thin Films, G. Hass, ed. (Academic Press, New York, 1963), Vol. 1, pp. 69-121.

Bloomstein, T. M.
Bonnecaze, R. T.
Choi, B. J.
Colburn, M.
Estroff, A.
Fan, Y.
Gräupner, P.
Lafferty, N.
Markoya, L.
McCafferty, D.
Mulkens, J.
Rothschild, M.
Sewell, H.
Smith, B. W.
Sreenivasan, S. V.
Streefkerk, B.
Switkes, M.
Willson, C. G.
Zhou, J.

2006, Smith, Proc. SPIE
2006, Sewell, Proc. SPIE
2004, Colburn, Micro. Eng.
2001, Switkes, J. Vac. Sci. Technol. B
2000, Switkes, Appl. Phys. Lett.

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