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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 14 — Jul. 10, 2006
  • pp: 6469–6478

Flat spectral response silicon arrayed waveguide gratings via ion implantation

Soon Thor Lim, Ching Eng Png, Seong Phun Chan, and Graham T. Reed  »View Author Affiliations

Optics Express, Vol. 14, Issue 14, pp. 6469-6478 (2006)

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A flat spectral response has long been a requirement in photonic networking. In order to find a low cost alternative compared to some other technologies, a novel method is demonstrated to achieve such a response in silicon-on-insulator arrayed waveguide gratings (AWG) through free carrier absorption, implemented by ion implantation of dopant species. The AWG is designed using 1.5µm Si-overlayer on an SOI wafer utilising rib waveguides with a width of 1.1µm and an etch-depth of 0.88µm to facilitate the singlemode, birefringence-free operation. It is also essential to achieve a uniform dopant concentration throughout the guiding region to avoid any phase errors resulting from the free carriers. This can be achieved using multiple ion implantation steps. Both n and p type dopants are investigated and results showed significant reduction of doping length is achieved by using n-type dopant as compared to a p-type dopants. The broadened passband is measured to be 0.5nm, a 5 times broadening from the Gaussian peak.

© 2006 Optical Society of America

OCIS Codes
(040.6040) Detectors : Silicon

ToC Category:
Integrated Optics

Original Manuscript: May 11, 2006
Revised Manuscript: June 8, 2006
Manuscript Accepted: June 12, 2006
Published: July 10, 2006

Soon T. Lim, Ching E. Png, Seong P. Chan, and Graham T. Reed, "Flat spectral response silicon arrayed waveguide gratings via ion implantation," Opt. Express 14, 6469-6478 (2006)

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