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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 14 — Jul. 10, 2006
  • pp: 6479–6484

1-W antimonide-based vertical external cavity surface emitting laser operating at 2-µm

A. Härkönen, M. Guina, O. Okhotnikov, K. Rößner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, and M. Fischer  »View Author Affiliations

Optics Express, Vol. 14, Issue 14, pp. 6479-6484 (2006)

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We report a high-power optically pumped semiconductor vertical external cavity surface emitting laser operating at 2-µm wavelength. The gain material consisted of 15 GaInSb quantum-wells placed within a threelambda GaSb cavity and grown on the top of an 18-pairs AlAsSb/GaSb Bragg reflector. For thermal management we have used a transparent diamond heat spreader bonded on the top of the structure. When cooled down to 5°C, the laser emitted up to 1 W of optical power in a nearly diffraction-limited Gaussian beam demonstrating the high potential of antimonide material for VECSEL fabrication.

© 2006 Optical Society of America

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(250.7270) Optoelectronics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: May 17, 2006
Revised Manuscript: June 28, 2006
Manuscript Accepted: June 28, 2006
Published: July 10, 2006

A. Härkönen, M. Guina, O. Okhotnikov, K. Rößner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, and M. Fischer, "1-W antimonide-based vertical external cavity surface emitting laser operating at 2-µm," Opt. Express 14, 6479-6484 (2006)

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