Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit
Optics Express, Vol. 14, Issue 18, pp. 8154-8159 (2006)
http://dx.doi.org/10.1364/OE.14.008154
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Abstract
Laser emission from an InP/InGaAsP thin film epitaxial layer bonded to a Silicon-on-Insulator waveguide circuit was observed. Adhesive bonding using divinyl-tetramethyldisiloxane-benzocyclobutene (DVS-BCB) was used to integrate the InP/InGaAsP epitaxial layers onto the waveguide circuit. Light is coupled from the laser diode into an underlying waveguide using an adiabatic inverted taper approach. 0.9mW optical power was coupled into the SOI waveguide using a 500μm long laser. Besides for use as a laser diode, the same type of devices can be used as a photodetector. 50μm long devices obtained a responsivity of 0.23A/W.
© 2006 Optical Society of America
OCIS Codes
(130.0130) Integrated optics : Integrated optics
(220.4610) Optical design and fabrication : Optical fabrication
ToC Category:
Integrated Optics
History
Original Manuscript: June 19, 2006
Manuscript Accepted: August 1, 2006
Published: September 1, 2006
Citation
G. Roelkens, D. Van Thourhout, R. Baets, R. Nötzel, and M. Smit, "Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit," Opt. Express 14, 8154-8159 (2006)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-18-8154
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References
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